2sa1108a Inchange Semiconductor Company, 2sa1108a Datasheet

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Inchange Semiconductor Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·High breakdown voltage ·High power dissipation ·Complement to type 2SC2660/2660A APPLICATIONS ·For power amplifier and TV vertical deflection output applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base ...

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Inchange Semiconductor Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER Collector-emitter V (BR)CEO breakdown voltage V Collector-base breakdown voltage (BR)CBO V Emitter-base breakdown voltage (BR)EBO V Collector-emitter saturation voltage CEsat V Base-emitter on voltage BE I Collector ...

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Inchange Semiconductor Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) Product Specification 2SA1133 2SA1133A 3 ...