2sa1122cdtl-e GUANGDONG KEXIN INDUSTRIAL CO.,LTD, 2sa1122cdtl-e Datasheet

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2sa1122cdtl-e

Manufacturer Part Number

2sa1122cdtl-e

Description

Silicon Pnp Epitaxial

Manufacturer

GUANGDONG KEXIN INDUSTRIAL CO.,LTD

Datasheet

1.2SA1122CDTL-E.pdf (1 pages)

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SMD Type

SMD Type

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector to emitter saturation voltage

Base to emitter voltage

Absolute Maximum Ratings Ta = 25

Electrical Characteristics Ta = 25

Features

Low frequency amplifier

h

FE

Marking

hFE

Classification

Parameter

160 320

Parameter

CC

250 500

CD

Silicon PNP Epitaxial

V

V

V

Symbol

V

(BR)CBO

(BR)CEO

(BR)EBO

I

CE(sat)

I

V

h

CBO

EBO

FE

BE

Symbol

400 800

V

V

V

2SA1122

T

P

CBO

CEO

EBO

I

Tj

stg

CE

C

C

I

I

I

V

V

V

I

V

C

C

E

C

CB

EB

CE

CE

= -10 ìA, I

= -10 ìA, I

= -1 mA, R

= -10 mA, I

= -30 V, I

= -2 V, I

= -12 V, I

= -12 V, I

-55 to +150

Rating

C

Testconditons

E

C

-100

BE

B

150

150

E

C

C

-55

-55

= 0

-5

= 0

= 0

= -1 mA

= 0

= -2 mA

= -2 mA

=

Unit

mW

mA

V

V

V

1

0.95

SOT-23

3

+0.1

-0.1

1.9

2.9

0.4

+0.1

-0.1

+0.1

-0.1

+0.1

-0.1

Min

160

-55

-55

-5

www.kexin.com.cn

2

Transistors

Typ

-0.75

Max

-0.5

-0.5

800

-0.5

1.Base

2.Emitter

3.collector

Unit: mm

0.1

IC

Unit

ìA

ìA

+0.05

-0.01

V

V

V

V

V

1

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