2sa1191 Renesas Electronics Corporation., 2sa1191 Datasheet

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2sa1191

Manufacturer Part Number
2sa1191
Description
Silicon Pnp Epitaxial
Manufacturer
Renesas Electronics Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SA1191
Manufacturer:
RENESAS
Quantity:
4 000
Part Number:
2sa1191AC
Manufacturer:
NXP
Quantity:
12 000
Application
Outline
Low frequency low noise amplifier
Complementary pair with 2SC2855 and 2SC2856
TO-92 (1)
2SA1190, 2SA1191
Silicon PNP Epitaxial
3
2
1
1. Emitter
2. Collector
3. Base

Related parts for 2sa1191

2sa1191 Summary of contents

Page 1

... Application Low frequency low noise amplifier Complementary pair with 2SC2855 and 2SC2856 Outline TO-92 (1) Silicon PNP Epitaxial 1. Emitter 2. Collector 3. Base ...

Page 2

... Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature 2 Symbol 2SA1190 2SA1191 V –90 –120 CBO V –90 –120 CEO V –5 –5 EBO I –100 – ...

Page 3

... T Collector output Cob — capacitance Noise figure NF — — Noise voltage reffered e — input Notes: 1. The 2SA1190 and 2SA1191 are grouped Pulse test D E 250 to 500 400 to 800 2SA1190, 2SA1191 2SA1191 Typ Max Min Typ Max Unit — ...

Page 4

... Maximum Collector Dissipation Curve 600 400 200 0 50 100 Ambient Temperature Typical Output Characteristics (2) –10 –8 –6 –4 –2 0 –4 –8 –12 Collector to Emitter Voltage V 4 Typical Output Characteristics (1) –20 –16 –12 –8 –4 0 –20 150 Collector to Emitter Voltage V Typical Transfer Characteristics – ...

Page 5

... 75°C –100 –10 25 –1.0 –25 –0.1 0 –2 –4 –6 –8 Emitter to Base Voltage V (V) EB 2SA1190, 2SA1191 Collector Cutoff Current vs. Collector to Emitter Voltage –1,000 = ∞ –100 –10 –1.0 –0.1 –100 0 –20 –40 (V) Collector to Emitter Voltage V Collector to Emitter Breakdown Voltage vs. ...

Page 6

... DC Current Transfer Ratio vs. Collector Current 1,000 Ta = 75°C –25 300 25 100 Pulse 10 –1 –3 –10 –30 Collector Current I (mA) C Base to Emitter Saturation Voltage vs. Collector Current – Pulse – –25°C –1.0 –0.3 –0.1 –1 –3 – ...

Page 7

... Signal Source Resistance 1,000 V = – kHz 100 I = – –1 –0.1 1.0 0.1 10 100 Signal Source Resistance 2SA1190, 2SA1191 Noise Voltage Reffered to Input vs. Collector Current 10 3 1.0 0.3 0.1 –0.1 –0.3 –100 Collector Current I Noise Voltage Reffered to Input vs. Collector to Emitter Voltage 1.0 0.9 0.8 0.7 0.6 0.5 –1 –3 ...

Page 8

... Noise Voltage Reffered to Input vs. Frequency V = – – –10 10 100 100 k Frequency f (Hz) ...

Page 9

Max 0.5 ± 0.1 1.27 2.54 3.8 ± 0.3 0.5 Hitachi Code TO-92 (1) JEDEC Conforms EIAJ Conforms Weight (reference value) 0.25 g Unit: mm ...

Page 10

Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise ...

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