2sa1576f SeCoS Halbleitertechnologie GmbH, 2sa1576f Datasheet
2sa1576f
Manufacturer Part Number
2sa1576f
Description
Silicon General Purpose Transistor
Manufacturer
SeCoS Halbleitertechnologie GmbH
Datasheet
1.2SA1576F.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2sa1576fRAT106R
Manufacturer:
ROHM
Quantity:
2 010
01-Jun-2002 Rev. A
http://www.SeCoSGmbH.com
Feature
·
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Characteristics at Ta = 25
Absolute Maximum Ratings at Ta = 25
Classification of h
Collector -Base Breakdown Voltage
Collector -Emitter Breakdown Voltage
Emitter -Base Breakdown Voltage
Collector -Emitter Breakdown Voltage
Emitter -Base Cutoff Current
Collector Saturation Voltage 1
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Marking Code: 5AX
X = hFE Rank Code
BASE
Complements the 2SC4081F
1
Parameter
Elektronische Bauelemente
COLLECTOR
Range
Rank
EMITTER
3
2
Parameter
1
FE
2
3
120 - 270
Symbol
VCBO
VCEO
VEBO
Q
V
Tstg
PD
IC
Tj
D
Symbol
BV
BV
BV
I
I
V
h
fT
Cob
CBO
EBO
FE
CE(sat)
CBO
CEO
EBO
1
Top View
RoHS Compliant Product
3
G
A
Min
-60
-50
120
-6
L
-
-
-
-
-
2
Typ.
H
140
4.0
-
-
-
-
-
-
-
B S
C
180 - 390
Max
-100
-100
-500
560
5.0
-55~+150
-
-
-
-
*Pulse Test: Pulse Width = 380us, Duty Cycle = 2%
Ratings
R
K
+150
-150
225
-60
-50
-6
General Purpose Transistor
Unit
MHz
mV
nA
nA
pF
V
V
V
-
2SA1576F
Any changing of specification will not be informed individual
I
I
I
V
V
V
V
I
V
C
C
E
C
J
CE
CE
CB
EB
CB
=-50uA
=-1mA
=-50uA
=-50mA, I
=-6V, I
=-12V, I
PNP Silicon
=-60V
=-6V
=-12V, f=1MHz , I
Test Conditions
C
=-1mA
E
B
=-2 mA, f=100MHz
=-5mA
270 - 560
Dim
All Dimension in mm
A
B
C
D
G
H
K
S
V
J
L
S
E
Unit
mW
mA
=0
V
V
V
SOT-323
1.800
1.150
0.800
0.300
1.200
0.000
0.100
0.350
0.590
2.000
0.280
Min
2.200
1.350
1.000
0.400
1.400
0.100
0.250
0.500
0.720
2.400
0.420
Max
Page 1 of 3
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2sa1576f Summary of contents
Page 1
... EBO -100 CBO -100 EBO -500 CE(sat) h 120 - 560 140 - Cob - 4.0 5.0 Q 120 - 270 180 - 390 2SA1576F PNP Silicon General Purpose Transistor SOT-323 Dim Min A 1.800 B 1.150 C 0.800 D 0.300 G 1.200 H 0.000 J 0.100 K 0.350 L 0.590 S 2.000 0.280 All Dimension in mm Ratings ...
Page 2
... Elektronische Bauelemente Characteristics Curve http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 2SA1576F PNP Silicon General Purpose Transistor Any changing of specification will not be informed individual Page ...
Page 3
... Elektronische Bauelemente http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 2SA1576F PNP Silicon General Purpose Transistor Any changing of specification will not be informed individual Page ...