2sa1515 SeCoS Halbleitertechnologie GmbH, 2sa1515 Datasheet

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2sa1515

Manufacturer Part Number

2sa1515

Description

-1 A, -40 V Pnp Plastic Encapsulated Transistor

Manufacturer

SeCoS Halbleitertechnologie GmbH

Datasheet

1.2SA1515.pdf (1 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

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Part Number:

2SA1515

Manufacturer:

PANASONIC

Quantity:

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Company:

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Bonase Electronics (HK) Co., Limited

Part Number:

2SA1515

Manufacturer:

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Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

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2SA1515

Manufacturer:

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Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

2sa1515-Q

Manufacturer:

ROHM

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Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

2sa1515-R

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Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

2sa1515S

Manufacturer:

ROHM/罗姆

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Current page: 1 of 1
Download datasheet (79Kb)

http://www.SeCoSGmbH.com/

26-Jan-2011 Rev. A

FEATURES

CLASSIFICATION OF h

ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS





Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance From Junction to Ambient

Junction, Storage Temperature

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector to Emitter Saturation Voltage

Transition Frequency

Collector Output Capacitance

Product-Rank 2SA1515-P 2SA1515-Q 2SA1515-R

Low Collector-Emitter Saturation Voltage

Low Transition Frequency

Range

Elektronische Bauelemente

Parameter

82~180

Parameter

FE

120~270

A suffix of “-C” specifies halogen & lead-free

(T

Symbol

V

V

V

V

A

(T

180~390

(BR)CBO

(BR)CEO

(BR)EBO

I

I

CE(sat)

h

C

CBO

EBO

= 25°C unless otherwise specified)

f

FE

A

T

ob

= 25°C unless otherwise specified)

RoHS Compliant Product

Symbol

T

Min

-40

-32

J

V

V

V

82

50

R

-5

, T

-

-

-

-

P

CBO

CEO

EBO

I

θJA

C

C

STG

Typ

-

-

-

-

-

-

-

-

-

PNP Plastic Encapsulated Transistor

Max

-0.5

-0.5

-0.5

390

30

-

-

-

-

150, -55~150

G

K

E

Rating

500

250

-40

-32

Unit

MHz

-5

-1

μA

μA

pF

V

V

V

V

A

2SA1515

Any changes of specification will not be informed individually.

-1 A, -40 V

Base

H

J

B

C

I

I

I

V

V

V

I

V

V

C

C

E

C



CB

EB

CE

CE

CB

= -0.05mA, I

= -1mA, I

= -0.05mA, I

= -0.5A, I

= -4V, I

= -20V, I

= -3V, I

= -5V, I

= -10V, I

D

F

Test condition

C

C

C

TO-92

B

B

=0

Collector

=0

= -0.1A

= -0.05A

= -50mA

E

E

Emitter

=0

= -0, f=1MHz

C

E





=0

=0

°C / W

REF.

Emitter

Collector

Base

Unit

mW

A

B

C

D

E

G

H

K

F

J

°C

V

V

V

A

12.70

Min.

4.40

4.30

3.30

0.36

0.36

1.10

2.42

0.36

Millimeter

Page 1 of 1

1.27 TYP.

Max.

4.70

4.70

3.81

0.56

0.51

2.66

0.76

-

-

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