2sa1500 Panasonic Corporation of North America, 2sa1500 Datasheet

no-image

2sa1500

Manufacturer Part Number
2sa1500
Description
Silicon Pnp Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet
Power Transistors
2SA1500
Silicon PNP epitaxial planar type
For power switching
*
h
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
FE1
Features
High-speed switching
High collector to base voltage V
Wide area of safe operation (ASO)
Satisfactory linearity of foward current transfer ratio h
Absolute Maximum Ratings
Electrical Characteristics
Rank
h
FE1
Rank classification
Parameter
Parameter
20 to 60
T
Ta=25 C
C
Q
=25 C
50 to 100
Symbol
V
V
V
I
I
P
T
T
CP
C
P
C
j
stg
CBO
CEO
EBO
I
I
V
h
h
V
V
f
t
t
t
on
stg
f
CBO
EBO
T
FE1
FE2
(T
Symbol
CBO
CEO
CE(sat)
BE(sat)
C
*
(T
=25˚C)
–55 to +150
C
=25˚C)
Ratings
–400
–400
150
1.4
–7
–8
–5
40
V
V
I
V
V
I
I
V
I
I
V
C
C
C
C
B1
CB
EB
CE
CE
CE
CC
= –10mA, I
= –2A, I
= –2A, I
= –2A,
= – 0.4A, I
= –7V, I
= –5V, I
= –5V, I
= –10V, I
= –400V, I
= –100V
B
B
FE
Unit
Conditions
C
C
C
˚C
˚C
= – 0.4A
= – 0.4A
W
V
V
V
A
A
C
B
B2
= 0
= – 0.5A
= –2A
E
= – 0.5A, f = 1MHz
= 0
= 0
= 0.4A,
–400
1
10.5 0.5
min
9.5 0.2
8.0 0.2
20
8
2
3
5.08 0.5
2.54 0.3
0.8 0.1
1.4 0.1
typ
15
3.7 0.2
JEDEC:TO–220(a)
EIAJ:SC–46(a)
–100
–100
max
–1.0
–1.5
100
4.5 0.2
1.0
2.5
1.0
0.6
1:Base
2:Collector
3:Emitter
+0.1
–0.2
2.5 0.2
Unit: mm
1.4 0.1
MHz
Unit
V
V
V
A
A
s
s
s
1

Related parts for 2sa1500

2sa1500 Summary of contents

Page 1

... Power Transistors 2SA1500 Silicon PNP epitaxial planar type For power switching Features High-speed switching High collector to base voltage V Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio h Absolute Maximum Ratings Parameter Symbol Collector to base voltage V CBO Collector to emitter voltage ...

Page 2

... B2 V =–100V CC T =25˚ stg 0 0.1 0.03 0.01 0 –1 –2 –3 –4 – Collector current I C 2SA1500 V — I CE(sat) C –100 –30 –10 T =100˚C C –3 25˚C –1 –25˚C – 0.3 – 0.1 – 0.03 – 0.01 – 0.1 – 0.3 –1 –3 –10 – ...

Page 3

... Power Transistors R 10000 Note: R was measured at Ta=25˚C and under natural convection. th (1) Without heat sink (2) With a 100 1000 100 10 1 0.1 –4 –3 –2 – Time — t th(t) 100 2mm Al heat sink (1) ( 2SA1500 4 ...

Page 4

Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...

Related keywords