2sa1602 ISAHAYA ELECTRONICS CORPORRATION, 2sa1602 Datasheet

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2sa1602

Manufacturer Part Number
2sa1602
Description
For Low Frequency Amplify Application Silicon Pnp Epitaxial Type Super Mini Type Description
Manufacturer
ISAHAYA ELECTRONICS CORPORRATION
Datasheet

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DESCRIPTION
silicon PNP epitaxial transistor,
It is designed for low frequency voltage application.
FEATURE
● Small collector to emitter saturation voltage.
●Excellent linearity of DC forward gain.
●Super mini package for easy mounting
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
2SA1602 is a super mini package resin sealed
.
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Symbol
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
Noise figure
Parameter
V
V
V
T
I
P
T
CBO
CEO
EBO
stg
O
c
j
VCE(sat)=-0.3V max(@Ic=-100mA,IB=-10mA)
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Parameter
(Ta=25℃)
ISAHAYA ELECTRONICS CORPORATION
(Ta=25℃)
-55~+150
Ratings
VCE(sat)
V(BR)
+150
Symbol
-200
-50
-50
200
-6
I
I
hFE
hFE
Cob
CBO
EBO
NF
fT
CEO
I
V
V
V
V
I
V
V
V
C
C
Unit
mW
mA
=-100μA ,R
CB
EB
CE
CE
=-100mA ,I
CE
CB
CE
V
V
V
=-6V, I
=-50V, I
=-6V, I
=-6V, I
=-6V, I
=-6V, I
=-6V, I
OUTLINE DRAWING
C
C
C
E
E
E
※) It shows hFE classification in below table.
hFE Item
=10mA
=0.3mA,f=100Hz,RG=10kΩ
=0mA
=-1mA
=-0.1mA
=0,f=1MHz
E
B
=0mA
=-10mA
BE
Test conditions
=∞
SILICON PNP EPITAXIAL TYPE(Super mini type)
Item
FOR LOW FREQUENCY AMPLIFY APPLICATION
TERMINAL CONNECTER
150~300
0.425
JEITA:SC-70
①:BASE
②:EMITTER
③:COLLECTOR
〈SMALL-SIGNAL TRANSISTOR〉
250~500
2.1
1.25
Min
-50
150
90
0.425
-
-
-
-
-
-
400~800
Limits
200
Typ
2SA1602
-
-
-
-
-
-
4
-
Unit:mm
Max
-0.1
-0.1
800
-0.3
20
-
-
-
-
MHz
Unit
μA
μA
V
dB
pF
V

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2sa1602 Summary of contents

Page 1

... DESCRIPTION 2SA1602 is a super mini package resin sealed silicon PNP epitaxial transistor designed for low frequency voltage application. . FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.3V max(@Ic=-100mA,IB=-10mA) ●Excellent linearity of DC forward gain. ●Super mini package for easy mounting ...

Page 2

... COMMON EMITTER TRANSFER -50 Ta=25℃ VCE=-6V -40 -30 -20 -10 -0 -0.0 -0.2 -0.4 -0.6 BASE TO EMITTER VOLTAGE VBE(V) GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT 250 Ta=25℃ VCE=-6V 200 150 100 EMITTER CURRENT IE(mA) COLLECTOR DISSIPATION VS.AMBIENT TEMPERTURE 100 AMBIENT TEMPERTURE Ta (℃ ) 2SA1602 -0.8 -1.0 100 125 150 ...

Page 3

... TRANSISTOR〉 ISAHAYA ELECTRONICS CORPORATION FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) 2SA1602 ...

Page 4

Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! · ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility ...

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