2sa1890g Panasonic Corporation of North America, 2sa1890g Datasheet

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2sa1890g

Manufacturer Part Number
2sa1890g
Description
Bipolar Power Transistors
Manufacturer
Panasonic Corporation of North America
Datasheet
Transistors
2SA1890G
Silicon PNP epitaxial planar type
For low-frequency output amplification
Complementary to 2SC5026G
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: September 2007
Note) * : Printed circuit board: Copper foil area of 1 cm
• Low collector-emitter saturation voltage V
• High collector-emitter voltage (Base open) V
• Mini power type package, allowing downsizing of the equipment
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
and automatic insertion through the tape packing and the magazine
packing.
2. * 1: Pulse measurement
board thickness of 1.7 mm for the collector portion
* 2: Rank classification
Rank
Parameter
h
Parameter
FE1
120 to 240
This product complies with the RoHS Directive (EU 2002/95/EC).
*
R
* 1
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
V
h
I
h
P
CBO
I
T
V
V
V
CEO
EBO
a
CP
170 to 340
I
stg
FE2
C
FE1
CE(sat)
BE(sat)
C
C
CBO
j
f
CBO
CEO
EBO
= 25°C
T
ob
* 2
* 1
S
CE(sat)
−55 to +150
CEO
Rating
I
I
I
V
V
V
I
I
V
V
C
C
E
C
C
−1.5
−80
−80
150
2
CB
CE
CE
CB
CB
−5
−1
= −10 µA, I
= −1 mA, I
= −10 µA, I
= −500 mA, I
= −500 mA, I
1
or more, and the
SJD00327AED
= −2 V, I
= −2 V, I
= −10 V, I
= −40 V, I
= −10 V, I
Conditions
Unit
B
C
C
°C
°C
E
C
W
E
V
V
V
A
A
E
E
= 0
= −100 mA
= −500 mA
= 0
= 0
B
B
= 50 mA, f = 200 MHz
= 0
= 0, f = 1 MHz
= −50 mA
= −50 mA
■ Package
■ Marking Symbol: 1Z
• Code
• Pin Name
MiniP3-F2
1: Base
2: Collector
3: Emitter
Min
−80
−80
120
−5
60
− 0.85
− 0.2
Typ
120
15
− 0.1
− 0.3
Max
−1.2
340
30
MHz
Unit
µA
pF
V
V
V
V
V
1

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2sa1890g Summary of contents

Page 1

... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SA1890G Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026G ■ Features • Low collector-emitter saturation voltage V • High collector-emitter voltage (Base open) V • Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing ...

Page 2

... This product complies with the RoHS Directive (EU 2002/95/EC). 2SA1890G  1.2 Copper plate at the collector 2 is more than area, 1 thickness 1.0 0.8 0.6 0.4 0 100 120 140 160 ( °C ) Ambient temperature T a  BE(sat) C −100 = −10 = − ...

Page 3

... This product complies with the RoHS Directive (EU 2002/95/EC). MiniP3-F2 4.50 ±0.10 1.60 ±0. 0.40 ±0.08 1.50 ±0.10 (5°) 3.00 ±0.15 1.50 3 0.50 ±0.08 (45°) SJD00327AED 2SA1890G Unit: mm ±0.10 0.41 ±0.03 3 ...

Page 4

Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...

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