2sa1810 Renesas Electronics Corporation., 2sa1810 Datasheet

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2sa1810

Manufacturer Part Number
2sa1810
Description
Silicon Pnp Epitaxial
Manufacturer
Renesas Electronics Corporation.
Datasheet
Application
High frequency amplifier
Features
Excellent high frequency characteristics
f
= 300 MHz typ
T
High voltage and low output capacitance
V
= –200 V, Cob = 5.0 pF typ
CEO
Suitable for wide band video amplifier
Outline
TO-126 MOD
2SA1810
Silicon PNP Epitaxial
1
2
3
1. Emitter
2. Collector
3. Base

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2sa1810 Summary of contents

Page 1

... Application High frequency amplifier Features Excellent high frequency characteristics f = 300 MHz typ T High voltage and low output capacitance V = –200 V, Cob = 5.0 pF typ CEO Suitable for wide band video amplifier Outline TO-126 MOD 2SA1810 Silicon PNP Epitaxial Emitter 2. Collector 3. Base ...

Page 2

... DC current transfer ratio Base to emitter voltage V BE Collector to emitter saturation V CE(sat) voltage Gain bandwidth product f T Collector output capacitance Cob Note: 1. The 2SA1810 is grouped 120 100 to 200 2 Symbol Ratings V –200 CBO V –200 CEO V –5 EBO I –0.2 ...

Page 3

... Collector to emitter Voltage V DC Current Transfer Ratio vs. Collector Current 1,000 500 200 C 100 –10 –1 –2 –5 –10 –20 (V) Collector current I 2SA1810 1 Shot pulse –500 –1000 ( – Pulse –50 –100–200 (mA ...

Page 4

... Collector to Emitter Saturation Voltage vs. Collector Current –10 –5 –2 –1.0 –0 –0.2 –0.1 –0.05 –1 –2 –5 –10 –20 Collector current I Gain Bandwidth Product vs. Collector Current 1,000 V Pulse 500 200 100 –1 –2 –5 –10 –20 Collector current I ...

Page 5

Hitachi Code TO-126 Mod JEDEC — EIAJ — Weight (reference value) 0.67 g Unit: mm ...

Page 6

Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise ...

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