2sa1845

Manufacturer Part Number2sa1845
DescriptionPnp Silicon Epitaxial Transistor For High-speed Switching
ManufacturerRenesas Electronics Corporation.
2sa1845 datasheet
 


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PNP SILICON EPITAXIAL TRANSISTOR
The 2SA1845 is a power transistor developed for high-speed switching and features a high h
This transistor is ideal for use as a driver in DC/DC converters and actuators.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
• Auto-mounting possible in radial taping specifications
• Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions
• High h
and low V
:
FE
CE(sat)
≤ −0.3 V
= −3.0 A, I
V
@I
CE(sat)
C
B
≥ 100
= −2.0 V, I
h
@V
FE
CE
• Fast switching speed
ABSOLUTE MAXIMUM RATINGS (Ta = 25° ° ° ° C)
Parameter
Symbol
Collector to base voltage
V
CBO
Collector to emitter voltage
V
CEO
Emitter to base voltage
V
EBO
Collector current (DC)
I
C(DC)
Collector current (pulse)
I
C(pulse)
Base current (DC)
I
B(DC)
Total power dissipation
P
T
Junction temperature
T
Storage temperature
T
stg
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15592EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
DATA SHEET
SILICON POWER TRANSISTOR
FOR HIGH-SPEED SWITCHING
= −0.15 A
= −1.0 A
C
Conditions
PW ≤ 300 µ s, duty cycle ≤ 2%
Ta = 25°C
j
2SA1845
at low V
.
FE
CE(sat)
Ratings
Unit
−150
V
−100
V
−7.0
V
−5.0
A
−10
A
−2.5
A
1.8
W
°C
150
−55 to +150
°C
©
1998
2002

2sa1845 Summary of contents

  • Page 1

    ... PNP SILICON EPITAXIAL TRANSISTOR The 2SA1845 is a power transistor developed for high-speed switching and features a high h This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus contributing to mounting cost reduction. ...

  • Page 2

    ... MHz −3 −I = −0. 16.7 Ω − 200 to 400 TAPING SPECIFICATION Data Sheet D15592EJ2V0DS 2SA1845 MIN. TYP. MAX. Unit −10 µ A −1.0 mA µ A −10 −1.0 mA µ A −10 − 100 − 100 400 − ...

  • Page 3

    ... TYPICAL CHARACTERISTICS (Ta = 25° ° ° ° C) Ambient Temperature Ta (°C) Single pulse Collector to Emitter Voltage V Collector to Emitter Voltage V Ambient Temperature Ta (°C) (V) Pulse Width PW (s) CE (V) Collector Current I CE Data Sheet D15592EJ2V0DS 2SA1845 Pulse test ( ...

  • Page 4

    ... Collector Current I Collector Current I Collector Current I 4 Pulse test (A) Collector Current I C (A) C Collector to Base Voltage V (A) C Data Sheet D15592EJ2V0DS 2SA1845 Pulse test (A) C (V) CB ...

  • Page 5

    ... SWITCHING TIME ( TEST CIRCUIT on stg f Base current waveform Collector current waveform Data Sheet D15592EJ2V0DS 2SA1845 5 ...

  • Page 6

    ... NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Please check with an NEC sales representative for 2SA1845 The M8E 00. 4 ...