2sa1845 Renesas Electronics Corporation., 2sa1845 Datasheet

no-image

2sa1845

Manufacturer Part Number
2sa1845
Description
Pnp Silicon Epitaxial Transistor For High-speed Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
Document No. D15592EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
This transistor is ideal for use as a driver in DC/DC converters and actuators.
contributing to mounting cost reduction.
FEATURES
• Auto-mounting possible in radial taping specifications
• Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions
• High h
• Fast switching speed
ABSOLUTE MAXIMUM RATINGS (Ta = 25° ° ° ° C)
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
V
h
The 2SA1845 is a power transistor developed for high-speed switching and features a high h
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
FE
CE(sat)
≥ 100
FE
≤ −0.3 V
and low V
Parameter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
CE(sat)
@I
@V
C
CE
= −3.0 A, I
:
= −2.0 V, I
PNP SILICON EPITAXIAL TRANSISTOR
Symbol
I
V
V
V
I
C(pulse)
I
C(DC)
B(DC)
T
P
B
CBO
CEO
EBO
T
stg
T
FOR HIGH-SPEED SWITCHING
j
= −0.15 A
C
= −1.0 A
PW ≤ 300 µ s, duty cycle ≤ 2%
Ta = 25°C
DATA SHEET
Conditions
SILICON POWER TRANSISTOR
−55 to +150
Ratings
−150
−100
−7.0
−5.0
−2.5
−10
150
1.8
2SA1845
FE
at low V
©
Unit
°C
°C
CE(sat)
W
V
V
V
A
A
A
.
1998
2002

Related parts for 2sa1845

2sa1845 Summary of contents

Page 1

... PNP SILICON EPITAXIAL TRANSISTOR The 2SA1845 is a power transistor developed for high-speed switching and features a high h This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus contributing to mounting cost reduction. ...

Page 2

... MHz −3 −I = −0. 16.7 Ω − 200 to 400 TAPING SPECIFICATION Data Sheet D15592EJ2V0DS 2SA1845 MIN. TYP. MAX. Unit −10 µ A −1.0 mA µ A −10 −1.0 mA µ A −10 − 100 − 100 400 − ...

Page 3

... TYPICAL CHARACTERISTICS (Ta = 25° ° ° ° C) Ambient Temperature Ta (°C) Single pulse Collector to Emitter Voltage V Collector to Emitter Voltage V Ambient Temperature Ta (°C) (V) Pulse Width PW (s) CE (V) Collector Current I CE Data Sheet D15592EJ2V0DS 2SA1845 Pulse test ( ...

Page 4

... Collector Current I Collector Current I Collector Current I 4 Pulse test (A) Collector Current I C (A) C Collector to Base Voltage V (A) C Data Sheet D15592EJ2V0DS 2SA1845 Pulse test (A) C (V) CB ...

Page 5

... SWITCHING TIME ( TEST CIRCUIT on stg f Base current waveform Collector current waveform Data Sheet D15592EJ2V0DS 2SA1845 5 ...

Page 6

... NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Please check with an NEC sales representative for 2SA1845 The M8E 00. 4 ...

Related keywords