2sc5026 Panasonic Corporation of North America, 2sc5026 Datasheet
2sc5026
Manufacturer Part Number
2sc5026
Description
Silicon Npn Epitaxial Planer Type For Low-frequency Output Amplification
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SC5026.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SC5026
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Part Number:
2sc5026-R(TX)
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Transistors
2SC5026
Silicon NPN epitaxial planar type
For low-frequency output amplification
Complementary to 2SA1890
■ Features
■ Absolute Maximum Ratings T
Note) * : Copper plate at the collector is more than 1 cm
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2002
• Low collector-emitter saturation voltage V
• High collector-emitter voltage (Base open) V
• Mini Power type package, allowing downsizing of the equip-
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
ment and automatic insertion through the tape packing and the
magazine packing
2. * 1: Pulse measurement
Absolute maximum rating without heat sink for P
* 2: Rank classification
Rank
Parameter
h
Parameter
FE1
120 to 240
*
R
* 1
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
V
h
h
I
P
CBO
I
T
V
V
V
CEO
EBO
a
CP
170 to 340
I
stg
FE1
FE2
C
CE(sat)
BE(sat)
C
C
CBO
j
f
CBO
CEO
EBO
= 25°C
T
ob
2
* 2
* 1
S
in area, 1.7 mm in thickness
CE(sat)
−55 to +150
CEO
Rating
I
I
I
V
V
V
I
I
V
V
C
C
E
C
C
150
CB
CE
CE
CB
CB
1.5
80
80
= 10 µA, I
= 1 mA, I
= 10 µA, I
= 500 mA, I
= 500 mA, I
5
1
1
SJC00175CED
= 2 V, I
= 2 V, I
C
= 40 V, I
= 10 V, I
= 10 V, I
is 0.5 W
B
C
C
C
E
Conditions
Unit
E
E
E
= 0
= 100 mA
= 500 mA
°C
°C
W
= 0
= 0
B
B
V
V
V
A
A
= 0
= −50 mA, f = 200 MHz
= 0, f = 1 MHz
= 50 mA
= 50 mA
Marking Symbol: 2A
0.4
1.5
±0.08
±0.1
3˚
1
3.0
4.5
1.6
Min
120
80
80
60
±0.15
±0.1
±0.2
5
2
0.5
±0.08
3
0.15
0.85
Typ
120
10
MiniP3-F1 Package
45˚
Max
1.5
340
0.1
0.3
1.2
20
±0.1
0.4
1: Base
2: Collector
3: Emitter
±0.04
Unit: mm
MHz
Unit
µA
pF
V
V
V
V
V
1
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2sc5026 Summary of contents
Page 1
... Transistors 2SC5026 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890 ■ Features • Low collector-emitter saturation voltage V • High collector-emitter voltage (Base open) V • Mini Power type package, allowing downsizing of the equip- ment and automatic insertion through the tape packing and the magazine packing ■ ...
Page 2
... 1.4 Copper plate at the collector 2 is more than area, 1.2 1 thickness 1.0 0.8 0.6 0.4 0 100 120 140 160 ( °C ) Ambient temperature T a BE(sat) C 100 = 25°C = −25° 75°C 0.1 0.01 0.01 0 Collector current I ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...