2sc5087r TOSHIBA Semiconductor CORPORATION, 2sc5087r Datasheet

2sc5087r

Manufacturer Part Number

2sc5087r

Description

Silicon Npn Epitaxial Planar Type Vhf~uhf Band Low Noise Amplifier Applications

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.2SC5087R.pdf (3 pages)

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Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2SC5087R

Manufacturer:

toshiba

Quantity:

30 000

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VHF~UHF Band Low Noise Amplifier Applications

•

Absolute Maximum Ratings

Microwave Characteristics

Electrical Characteristics

Low noise figure, high gain.

NF = 1.1dB, |S

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Base current

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of high

Transition frequency

Insertion gain

Noise figure

Collector cut-off current

Emitter cut-off current

DC current gain

Output capacitance

Reverse transfer capacitance

Note 1: C

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Characteristic

is measured with a three-terminal method using a capacitance bridge.

21e

= 13dB (f = 1 GHz)

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

(Ta = 25°C)

⎪S

Symbol

21e

2SC5087R

CBO

EBO

CBO

CEO

EBO

stg

⎪

(1)

(2)

−55~125

Rating

= 10 V, I

= 5 V, I

= 10 V, I

= 1 V, I

= 10 V, I

150

125

= 0

= 20 mA, f = 1 GHz

Condition

= 0

= 0, f = 1 MHz(Note 2)

= 30 mA

= 30 mA, f = 1 GHz

= 7 mA, f = 1 GHz

= 20 mA

Unit

°C

Weight: 0.012 g (typ.)

JEDEC

JEITA

TOSHIBA

SMQ

120

Min

⎯

Typ.

12.5

13.5

Typ.

0.65

1.1

⎯

1.Base(B)

2.Emitter1(E1)

3.Collector(C)

4.Emitter(E2)

2SC5087R

2007-11-01

―

Max

240

1.6

⎯

Unit: mm

GHz

Unit

μA

⎯

Related parts for 2sc5087r

2sc5087r Summary of contents

Page 1

... EBO MHz(Note 2SC5087R 1.Base(B) 2.Emitter1(E1) 3.Collector(C) SMQ 4.Emitter(E2) JEDEC ― JEITA ― TOSHIBA ― Weight: 0.012 g (typ.) Min Typ. Max ⎯ ⎯ ⎯ ...

Page 2

... Marking 2 1 Type Name 2SC5087R 2007-11-01 ...

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 3 2SC5087R 20070701-EN GENERAL 2007-11-01 ...

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2sc5087r TOSHIBA Semiconductor CORPORATION, 2sc5087r Datasheet

2sc5087r

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2sc5087r Summary of contents

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