2sc5066ft TOSHIBA Semiconductor CORPORATION, 2sc5066ft Datasheet
2sc5066ft
Manufacturer Part Number
2sc5066ft
Description
Npn Epitaxial Planar Type Vhf~uhf Band Low Noise Amplifier Applications
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.2SC5066FT.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SC5066FT
Manufacturer:
toshiba
Quantity:
30 000
VHF~UHF Band Low Noise Amplifier Applications
•
•
Absolute Maximum Ratings
Microwave Characteristics
Electrical Characteristics
Low noise figure, high gain.
NF = 1.1dB, |S
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Transition frequency
Insertion gain
Noise figure
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
Note 1: h
Note 2: C
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Characteristics
Characteristics
Characteristics
FE
re
is measured by 3 terminal method with capacitance bridge.
classification O: 80~160, Y: 120~240
21e
|
2
= 12dB (f = 1 GHz)
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
(Ta = 25°C)
(Ta = 25°C)
(Ta = 25°C)
⎪S
⎪S
2SC5066FT
Symbol
Symbol
Symbol
NF (1)
NF (2)
V
V
21e
21e
V
I
I
T
CBO
EBO
h
C
C
P
CBO
CEO
EBO
I
I
(Note 1)
T
f
stg
FE
B
C
T
ob
re
C
⎪
⎪
j
2
2
(1)
(2)
V
V
V
V
V
V
V
V
V
CE
CE
CE
CE
CE
CB
EB
CE
CB
−55~125
Rating
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 10 V, I
= 1 V, I
= 5 V, I
= 5 V, I
100
125
20
12
15
30
3
1
C
C
C
C
C
C
C
E
Test Condition
Test Condition
E
= 0
= 0, f = 1 MHz
= 10 mA
= 10 mA, f = 500 MHz
= 10 mA, f = 1 GHz
= 3 mA, f = 500 MHz
= 3 mA, f = 1 GHz
= 10 mA
= 0
Unit
mW
mA
mA
°C
°C
V
V
V
(Note 2)
Weight: 0.0022 g (typ.)
JEDEC
JEITA
TOSHIBA
Min
Min
8.5
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
Typ.
Typ.
0.45
1.1
0.7
17
12
⎯
⎯
⎯
7
1
2SC5066FT
2-1B1A
2007-11-01
―
―
Max
Max
240
2.0
0.9
⎯
⎯
⎯
⎯
⎯
1
1
Unit: mm
GHz
Unit
Unit
dB
dB
μA
μA
pF
pF
Related parts for 2sc5066ft
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [Power Module]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
2sc5066ft Summary of contents
Page 1
... EBO (Note MHz 2SC5066FT JEDEC ― JEITA ― TOSHIBA 2-1B1A Weight: 0.0022 g (typ.) Min Typ. Max ⎯ ⎯ ⎯ 17 ⎯ 8.5 12 ⎯ ⎯ 1 ⎯ ...
Page 2
... Marking 2 2SC5066FT 2007-11-01 ...
Page 3
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 3 2SC5066FT 20070701-EN GENERAL 2007-11-01 ...