2sc5178/78r Renesas Electronics Corporation., 2sc5178/78r Datasheet

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2sc5178/78r

Manufacturer Part Number
2sc5178/78r
Description
Surface Mount Npn Silicon High Frequency Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet
ELECTRICAL CHARACTERISTICS
FEATURES
Notes: 1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
The NE686 series of NPN epitaxial silicon transistors are
designed for low voltage/low current, amplifier and oscillator
applications. NE686's high f
portable wireless applications up to 5 GHz. The NE686 die is
available in six different low cost plastic surface mount pack-
age styles.
• HIGH GAIN BANDWIDTH PRODUCT: f
• LOW VOLTAGE/LOW CURRENT OPERATION
• HIGH INSERTION POWER GAIN:
• LOW NOISE: 1.5 dB AT 2.0 GHz
• AVAILABLE IN SIX LOW COST PLASTIC SURFACE
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
DESCRIPTION
R
R
|S
|S
NF
NF
|S
|S
MOUNT PACKAGE STYLES
C
TH(J-C)
I
I
TH(J-A)
h
CBO
EBO
P
21e
21e
f
f
RE 4
FE
21E
21E
T
T
MIN
MIN
T
|
|
2
2
2. Electronic Industrial Association of Japan.
3. Pulsed measurement, PW  350 µs, duty cycle  2%.
4. The emitter terminal should be connected to the ground terminal of
|
|
2
2
the 3 terminal capacitance bridge.
= 12 dB @ 2 V, 7 mA, 2 GHz
= 11 dB @ 1 V, 5 mA, 2 GHz
Gain Bandwidth Product at
V
Gain Bandwidth Product at
V
Minimum Noise Figure at
V
Minimum Noise Figure at
V
Insertion Power Gain at
V
Insertion Power Gain at
V
Forward Current Gain
V
Collector Cutoff Current
at V
Emitter Cutoff Current
at V
Feedback Capacitance at
V
Total Power Dissipation
Thermal Resistance
(Junction to Ambient)
Thermal Resistance(Junction to Case) °C/W
CE
CE
CE
CE
CE
CE
CE
CB
EIAJ
CB
EB
= 2 V, I
= 1 V, I
= 2 V, I
= 1 V, I
= 2V, I
= 1V, I
= 2 V, I
= 2 V, I
= 5 V, I
= 1 V, I
2
PACKAGE OUTLINE
REGISTERED NUMBER
PART NUMBER
C
C
C
C
C
C
C
E
=7 mA, f = 2.0 GHz
=5 mA, f = 2.0 GHz
= 0 mA, f = 1 MHz
= 7 mA, f = 2.0 GHz
= 5 mA, f = 2.0 GHz
= 3 mA, f = 2.0 GHz
= 3 mA, f = 2.0 GHz
= 7 mA
C
E
= 0 mA
= 0 mA
HIGH FREQUENCY TRANSISTOR
SURFACE MOUNT NPN SILICON
T
make it an excellent choice for
3
at
1
T
of 15 GHz
°C/W
GHz
GHz
mW
dB
dB
dB
dB
nA
nA
pF
(T
A
= 25°C)
8.5 11
12 15.5
10
10
70
NE68618
2SC5180
1.5
1.5
0.3
18
13
12
140
100
100
833
2.0
2.0
0.5
30
8.5
10
70
8
7
NE68619
2SC5181
18 (SOT 343 STYLE)
30 (SOT 323 STYLE)
39 (SOT 143 STYLE)
10.5
1.5
1.5
0.4
19
13
12
9
1250
140
100
100
2.0
2.0
0.6
30
California Eastern Laboratories
7.5
7.5
70
7
7
NE68630
2SC5179
8.5
1.5
1.5
8.5
0.4
30
9
9
140
100
100
833
2.0
2.0
0.6
30
19 (3 PIN ULTRA SUPER
33 (SOT 23 STYLE)
8.5
7.5
10
70
39R (SOT 143R STYLE)
7
NE68633
2SC5177
NE686
SERIES
1.5
1.5
8.5
0.5
MINI MOLD)
33
13
12
9
140
100
100
625
2.0
2.0
0.6
30
10.5 13.5
8.5
9.5 11.5
7.5 10.5
NE68639/39R
2SC5178/78R
70
39/39R
1.5
1.5
0.3
12
140
100
100
625
2.0
2.0
0.5
30

Related parts for 2sc5178/78r

2sc5178/78r Summary of contents

Page 1

... NE686 SERIES 19 (3 PIN ULTRA SUPER MINI MOLD) 33 (SOT 23 STYLE) 39R (SOT 143R STYLE) NE68630 NE68633 NE68639/39R 2SC5179 2SC5177 2SC5178/78R 10.5 13.5 7 8.5 8.5 12 8.5 1.5 2.0 1.5 2.0 1.5 2.0 1.5 2.0 7.5 9 7.5 9 9.5 11.5 7 8.5 7 8.5 7.5 10.5 70 140 70 140 ...

Page 2

ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Collector to Base Voltage CBO V Collector to Emitter Voltage CEO V Emitter to Base Voltage EBO I Collector Current C T Operating J Junction Temperature T Storage Temperature STG Notes: 1. Operation in ...

Page 3

TYPICAL PERFORMANCE CURVES NE68618, NE68630 D.C. POWER DERATING CURVE 100 100 Ambient Temperature, T NE68633, NE68639 D.C. POWER DERATING CURVE 100 100 Ambient Temperature, T (TA = 25°) FREE AIR 150 (°C) ...

Page 4

TYPICAL PERFORMANCE CURVES NE68618 INSERTION GAIN vs. COLLECTOR CURRENT GHz Collector Current D.C. CURRENT GAIN vs. COLLECTOR CURRENT 500 200 100 50 ...

Page 5

TYPICAL SCATTERING PARAMETERS GHz 0.1 GHz 1 0.1 GHz 5 GHz -.2 -.4 -.6 -1.5 NE68618 -. ...

Page 6

NE686 SERIES TYPICAL SCATTERING PARAMETERS GHz 1 GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68619 ...

Page 7

TYPICAL SCATTERING PARAMETERS GHz 1 GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68630 1.0 mA ...

Page 8

TYPICAL SCATTERING PARAMETERS GHz 1 0.1 GHz GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68633 ...

Page 9

OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 18 (SOT-343) 2.1 ± 0.2 1.25 ± 0 0.65 2.0 ± 0.2 0. +0.10 0.4 -0.05 0.3 0.9 ± 0 0.1 LEAD CONNECTIONS 1. Collector 2. Emitter ...

Page 10

OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 33 (SOT-23) +0.2 2.8 -0.3 2 2.9 ± 0.2 0.95 1 +0.2 1.5 -0.1 1.1 to 1.4 0 0.1 PACKAGE OUTLINE 39 (SOT-143) +0.2 2.8 -0.3 +0.2 1.5 -0.1 ...

Page 11

ORDERING INFORMATION PART NUMBER QUANTITY NE68618-T1 3000 NE68619-T1 3000 NE68630-T1 3000 NE68633-T1 3000 NE68639-T1 3000 NE68639R-T1 3000 Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these ...

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