2sc5440 Panasonic Corporation of North America, 2sc5440 Datasheet
2sc5440
Manufacturer Part Number
2sc5440
Description
Silicon Npn Triple Diffusion Mesa Type For Horizontal Deflection Output
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SC5440.pdf
(3 pages)
Power Transistors
2SC5440
Silicon NPN triple diffusion mesa type
For horizontal deflection output
■ Features
■ Absolute Maximum Ratings T
Note) * : Non-repetitive peak collector current
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
• High breakdown voltage, and high reliability through the use of a
• High-speed switching
• Wide safe operation area (ASO)
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Base current
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Storage time
Fall time
glass passivation layer
Parameter
Parameter
*
T
a
= 25°C
C
Symbol
V
V
V
V
= 25°C ± 3°C
Symbol
T
V
V
I
P
I
I
T
CBO
CEO
EBO
C
CES
CP
I
I
B
C
stg
CE(sat)
BE(sat)
C
h
CBO
EBO
t
j
f
stg
t
FE
= 25°C
T
f
−55 to +150
Rating
V
V
V
V
I
I
V
I
I
1 500
1 500
C
C
C
B1
600
150
CE
7.5
3.0
CB
CB
EB
CE
15
25
60
= 7.5 A, I
= 7.5 A, I
= 7.5 A, Resistance loaded
7
= 1.88 A, I
SJD00146BED
= 10 V, I
= 7 V, I
= 5 V, I
= 1 000 V, I
= 1 500 V, I
B
B
C
C
Conditions
C
Unit
= 1.88 A
= 1.88 A
= 0
= 7.5 A
°C
°C
B2
W
V
V
V
V
A
A
A
= 0.1 A, f = 0.5 MHz
E
E
= −3.76 A
= 0
= 0
5˚
1
15.5
10.9
Min
5
2
±0.5
±0.5
3
5.45
(4.0)
2.0
1.1
φ 3.2
Typ
±0.2
±0.1
3
±0.3
±0.1
TOP-3E-A1 Package
5˚
Max
1.5
2.7
0.2
50
50
1
9
3
5˚
EIAJ: SC-94
1: Base
2: Collector
3: Emitter
0.7
Unit: mm
5˚
3.0
5˚
±0.1
MHz
5˚
Unit
mA
µA
µA
µs
µs
±0.3
V
V
1
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2sc5440 Summary of contents
Page 1
... Power Transistors 2SC5440 Silicon NPN triple diffusion mesa type For horizontal deflection output ■ Features • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe operation area (ASO) ■ Absolute Maximum Ratings T ...
Page 2
... 100 (1)T =Ta C (2)With a 100×100×2mm Al heat sink (3)Without heat sink 80 ( (2) ( 120 160 Ambient temperature T (°C) a Safe operation area 100 t=100µ 10ms 1ms DC 1 0.1 0.01 Non repetitive pulse T =25˚ ...
Page 3
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...