2sc5820wu-tl-e Renesas Electronics Corporation., 2sc5820wu-tl-e Datasheet

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2sc5820wu-tl-e

Manufacturer Part Number
2sc5820wu-tl-e
Description
Transistors Silicon Npn Epitaxial High Frequency Low Noise Amplifier / Oscillator High Frequency Low Noise Amplifier / Oscillator
Manufacturer
Renesas Electronics Corporation.
Datasheet

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2SC5820
Silicon NPN Epitaxial
High Frequency Low Noise Amplifier / Oscillator
Application
Outline
Note:
Absolute Maximum Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Rev.2.00 Aug 10, 2005 page 1 of 10
High gain bandwidth product
f
High power gain and low noise figure;
PG = 17.5 dB typ., NF = 1.15 dB typ. at f = 1.8 GHz
T
= 20 GHz typ.
Marking is “WU–“.
RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK-4)
Item
3
Symbol
V
V
V
Tstg
2
Pc
Tj
CBO
CEO
EBO
I
C
4
1
–55 to +150
Ratings
100
150
4.0
1.5
12
35
(Previous ADE-208-1604A)
1. Emitter
2. Collector
3. Emitter
4. Base
REJ03G0758-0200
Aug.10.2005
Unit
mW
mA
°C
(Ta = 25°C)
V
V
V
C
Rev.2.00

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2sc5820wu-tl-e Summary of contents

Page 1

Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator Application High gain bandwidth product GHz typ. T High power gain and low noise figure 17.5 dB typ 1.15 dB typ. at ...

Page 2

Electrical Characteristics Item Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure 3rd. Order Intercept Point Rev.2.00 Aug 10, 2005 page Symbol ...

Page 3

Main Characteristics Collector Power Dissipation Curve 200 150 100 100 Ambient Temperature Typical Transfer Characteristics 0.2 0.4 Base to Emitter Voltage Collector Output Capacitance vs. ...

Page 4

Reverse Transfer Capacitance vs. Collector to Base Voltage 1.0 0.8 0.6 0.4 0 Collector to Base Voltage V S Parameter vs. Collector Current Collector ...

Page 5

S Parameter vs. Frequency 1.5 0 –.2 –.4 –.6 –.8 –1 Condition 100 to 3000 MHz (100 MHz Step ...

Page 6

S Parameter S11 f (MHz) MAG ANG 100 0.844 -24.6 200 0.835 -23.1 300 0.838 -34.2 400 0.809 -45.7 500 0.781 -56.2 600 0.745 -66.8 700 0.710 -76.0 800 0.688 -85.5 900 0.659 -93.5 1000 0.639 -101.0 1100 0.633 ...

Page 7

S11 f (MHz) MAG ANG 100 0.717 -17.3 200 0.712 -34.2 300 0.699 -50.1 400 0.667 -65.5 500 0.635 -78.9 600 0.600 -91.5 700 0.572 -102.0 800 0.553 -112.1 900 0.533 -120.1 1000 0.522 -127.4 1100 0.515 -133.7 1200 ...

Page 8

S11 f (MHz) MAG ANG 100 0.556 -26.3 200 0.550 -50.8 300 0.537 -72.0 400 0.519 -90.7 500 0.501 -105.4 600 0.485 -118.3 700 0.475 -128.1 800 0.470 -137.3 900 0.462 -144.3 1000 0.460 -150.4 1100 0.460 -155.8 1200 ...

Page 9

S11 f (MHz) MAG ANG 100 0.441 -34.8 200 0.449 -65.1 300 0.455 -88.7 400 0.455 -107.9 500 0.451 -122.1 600 0.450 -133.9 700 0.449 -142.5 800 0.451 -150.6 900 0.449 -156.4 1000 0.449 -161.7 1100 0.453 -166.3 1200 ...

Page 10

... A-A Section B-B Section Ordering Information Part Name 2SC5820WU-TL-E 3000 Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page Package Name MASS[Typ.] CMPAK-4(T) / CMPAK-4(T)V ...

Page 11

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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