2n5245-l99z Fairchild Semiconductor, 2n5245-l99z Datasheet
2n5245-l99z
Manufacturer Part Number
2n5245-l99z
Description
2n5245 N-channel Rf Amplifier
Manufacturer
Fairchild Semiconductor
Datasheet
1.2N5245-L99Z.pdf
(3 pages)
©2004 Fairchild Semiconductor Corporation
N-Channel RF Amplifier
• This device is designed for HF/VHF mixer/amplifier and applications
• Sourced from process 90.
Absolute Maximum Ratings*
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
* Pulse Test: Pulse
Thermal Characteristics
V
V
I
T
Off Characteristics
V
I
V
On Characteristics
I
Small Signal Characteristics
gfs
goss
P
R
R
GF
GSS
DSS
where process 50is not adequate. Sufficient gain and low noise for
sensitive receivers.
Symbol
J
DG
GS
(BR)GSS
GS(off)
D
Symbol
, T
JC
JA
Symbol
STG
Gate-Source Breakdwon Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
Zero-Gate Voltage Drain Current *
Forward Transferconductance
Common- Source Output Conductance
300 s
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Parameter
Parameter
T
a
T
=25 C unless otherwise noted
a
=25 C unless otherwise noted
Parameter
T
a
=25 C unless otherwise noted
2N5245
I
V
V
V
V
V
G
GS
DS
DS
GS
GS
= 1.0 A, V
= 15V, I
= 25V, V
= 15V, V
= 0V, V
= 0V, V
Test Condition
DS
DS
D
DS
GS
DS
= 1.0nA
= 15V, f = 1.0kHz
= 15V, f = 1.0kHz
= 0
= 0
= 0
Max.
350
125
357
2.8
1. Gate 2. Source 3. Drain
1
-55 ~ 150
Ratings
-30
30
10
4500
Min.
-1.0
-30
5
TO-92
11000
Max.
-1.0
-0.6
15
50
mW/ C
Units
mW
C/W
C/W
Rev. A, January 2004
Units
mA
V
V
C
Units
mhos
mhos
mA
nA
V
V
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2n5245-l99z Summary of contents
Page 1
... Pulse Test: Pulse 300 s Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2004 Fairchild Semiconductor Corporation 2N5245 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition ...
Page 2
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2004 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A, January 2004 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ ...