2n3820-d26z Fairchild Semiconductor, 2n3820-d26z Datasheet
2n3820-d26z
Manufacturer Part Number
2n3820-d26z
Description
2n3820 Epitaxial Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
1.2N3820-D26Z.pdf
(3 pages)
©2002 Fairchild Semiconductor Corporation
P-Channel General Purpose Amplifier
• This device is designed primarily for low level audio and general
• Sourced from process 89.
Epitaxial Silicon Transistor
Absolute Maximum Ratings*
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
* Pulse Test: Pulse Width
Thermal Characteristics
* Device mounted on FR-4 PCB 1.6”
V
V
I
T
Off Characteristics
V
I
V
On Characteristics
I
Small Signal Characteristics
gfs
C
C
P
R
R
Symbol
GF
GSS
DSS
purpose applications with high impedance signal sources.
STG
DG
GS
(BR)GSS
GS
D
iss
rss
Symbol
JC
JA
Symbol
(off)
Gate-Source Breakdwon Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
Zero-Gate Voltage Drain Current *
Forward Transfer Conductance
Input Capacitance
Reverse Transfer Capacitance
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Storage Temperature Range
300ms, Duty Cycle
Parameter
1.6”
0.06”
2%
Parameter
T
A
T
=25 C unless otherwise noted
C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
I
V
V
V
V
V
V
G
GS
DS
DS
DS
DS
DS
2N3820
= 10 A, V
= -10V, I
= 10V, V
= -10V, V
= -10V, V
= -10V, V
= -10V, V
Test Condition
DS
D
DS
GS
GS
GS
GS
= -10 A
= 0
= 0
= 0
= 0, f = 1.0KHz
= 0, f = 1.0KHz
= 0, f = 1.0KHz
Max.
350
125
357
2.8
1. Drain 2. Gate 3. Source
Min.
-0.3
800
1
20
-55 ~ 150
Ratings
-20
20
10
Typ.
TO-92
Max.
5000
8.0
-15
20
32
16
mW/ C
Units
mW
Rev. A1, December 2002
C/W
C/W
Units
mA
V
V
C
Units
mhos
mA
nA
pF
pF
V
V
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2n3820-d26z Summary of contents
Page 1
... Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA * Device mounted on FR-4 PCB 1.6” 1.6” 0.06” ©2002 Fairchild Semiconductor Corporation 2N3820 T =25 C unless otherwise noted C Parameter T =25 C unless otherwise noted C Test Condition ...
Page 2
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A1, December 2002 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...