mje13009d Unisonic Technologies, mje13009d Datasheet

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mje13009d

Manufacturer Part Number
mje13009d
Description
High Voltage Fast-switching Npn Power Transistor
Manufacturer
Unisonic Technologies
Datasheet
MJE13009D
HIGH VOLTAGE
FAST-SWITCHING NPN POWER
TRANSISTOR
power transistor. It is characterized by high breakdown voltage,
high current capability, high switching speed and high reliability.
energy-saving lights electronic ballast, high frequency switching
power supplies, high frequency power transforms or common
power amplifiers, etc.
* High Breakdown Voltage
* High Current Capability
* High Switching Speed
* High Reliability
* RoHS-Compliant Product
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
B (1)
MJE13009DL-TA3-T
The UTC MJE13009D is a high voltage fast-switching NPN
The UTC MJE13009D is intended to be used in a
ORDERING INFORMATION
Lead Free Plating
FEATURES
DESCRIPTION
INTERNAL SCHEMATIC DIAGRAM
UNISONIC TECHNOLOGIES CO., LTD
Ordering Number
C (2)
E (3)
MJE13009DG-TA3-T
Halogen Free
Package
TO-220
B
1
Pin Assignment
NPN SILICON TRANSISTOR
C
2
E
3
Packing
Tube
QW-R203-041.A
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mje13009d Summary of contents

Page 1

... The UTC MJE13009D is a high voltage fast-switching NPN power transistor characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC MJE13009D is intended to be used in a energy-saving lights electronic ballast, high frequency switching power supplies, high frequency power transforms or common power amplifiers, etc ...

Page 2

... MJE13009D ABSOLUTE MAXIMUM RATINGS PARAMETER Collector- Emitter Voltage (V =-1.5V) BE Collector-Emitter Voltage (I =0) B Emitter-Base Voltage Collector Current Base Current Emitter Current Total Power Dissipation Linear Derating Factor Above Total Power Dissipation Linear Derating Factor Above Operating Junction Temperature Storage Temperature Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. ...

Page 3

... MJE13009D SWITCHING CHARACTERISTICS RESISTIVE LOAD Delay Time Rise Time Storage Time Fall Time INDUCTIVE LOAD, CLAMPED Voltage Storage Time Crossover Time Note: Pulse Test: Pulse Width=300μs, Duty Cycle=2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw NPN SILICON TRANSISTOR =125V, I =8A =1.6A, ...

Page 4

... MJE13009D TYPICAL CHARACTERISTICS Collector Current vs. Collector-Emitter Voltage 120 100 200 400 600 Collector-Emitter Voltage, V Collector Current vs. Collector- Emitter Voltage 25 I =1048μ =848μ =648μ =448μ =248μ Collector-Emitter Voltage, V UNISONIC TECHNOLOGIES CO ...

Page 5

... MJE13009D TYPICAL CHARACTERISTICS (Cont.) Collector Current vs. Collector- Emitter Voltage =429mA =329mA =229mA =129mA Collector-Emitter Voltage, V UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein ...

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