mje13007-tf3-t Unisonic Technologies, mje13007-tf3-t Datasheet

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mje13007-tf3-t

Manufacturer Part Number
mje13007-tf3-t
Description
Npn Bipolar Power Transistor For Switching Power Supply Applications
Manufacturer
Unisonic Technologies
Datasheet
MJE13007
NPN BIPOLAR POWER
TRANSISTOR FOR SWITCHING
POWER SUPPLY
APPLICATIONS
power switching inductive circuits where fall time is critical. It is
particularly suited for 115 and 220 V switch mode applications.
* V
* 700 V Blocking Capability
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
The UTC MJE13007 is designed for high–voltage, high–speed
CEO(SUS)
MJE13007-TA3-T
MJE13007-TF3-T
MJE13007L-TA3-T
ORDERING INFORMATION
DESCRIPTION
FEATURES
Normal
400 V
UNISONIC TECHNOLOGIES CO., LTD
Order Number
(1)Packing Type
(2)Package Type
(3)Lead Plating
MJE13007L-TA3-T
MJE13007L-TF3-T
Lead Free Plating
TO-220F
Package
(1)T: Tube
(2) TA3: TO-220, TF3: TO-220F
(3) L: Lead Free Plating, Blank: Pb/Sn
TO-220
*Pb-free plating product number: MJE13007L
Pin Assignment
B
B
1
NPN SILICON TRANSISTOR
C
C
2
1
1
E
E
3
Packing
Tube
Tube
TO-220F
TO-220
QW-R203-019.D
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mje13007-tf3-t Summary of contents

Page 1

... FEATURES * V 400 V CEO(SUS) * 700 V Blocking Capability ORDERING INFORMATION Order Number Normal Lead Free Plating MJE13007-TA3-T MJE13007L-TA3-T MJE13007-TF3-T MJE13007L-TF3-T MJE13007L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd NPN SILICON TRANSISTOR 1 1 *Pb-free plating product number: MJE13007L ...

Page 2

... MJE13007 ABSOLUTE MAXIMUM RATING PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Breakdown Voltage Emitter-Base Voltage Collector Current Base Current Emitter Current Total Device Dissipation Operating and Storage Junction Temperature Range Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. ...

Page 3

... MJE13007 TYPICAL THERMAL RESPONSE 1 0.7 D=0.5 0.5 D=0.2 0.2 D=0.1 0.1 D=0.05 0.07 0.05 D=0.02 0.02 D=0.01 SINGLE PULSE 0.01 0.01 0.02 0.05 0.1 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 7 is based on T limits are valid for duty cycles to 10% but must be debated when T debate the same as thermal limitations ...

Page 4

... MJE13007 Table 1. Test Conditions for Dynamic Performance REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING +15V 100Ω 150Ω 1µF 3W MPF930 MPF930 +10V 500Ω COMMON 500µF Voff BV CEO (SUS) L=10mH =20V CC I =100mA C( CLAMPED UNCLAMPED≒t2 t1 ADJUSTED TO ...

Page 5

... MJE13007 TYPICAL CHARACTERISTICS Figure 2. Base-Emitter Saturation Voltage 1.4 1 =-40℃ C 0.8 25℃ 100℃ 0.6 0.4 0.1 0.2 0.5 0.01 0.02 0.05 Collector Current, I Figure 4. Collector Saturation Region 3 2 =1A 0 0.01 0.02 0.05 0.1 0.2 0.5 Base Current, I Figure 6. Capacitance 10000 C ib 1000 C ob 100 10 0 Reverse Voltage,V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com. ...

Page 6

... MJE13007 TYPICAL CHARACTERISTICS Figure 8. Maximum Reverse Bias Switching Safe Operating Area ≦100℃ ≧4 AIN L =500μ 100 200 300 400 500 Collector-Emitter Clamp Voltage, V Figure 10. Turn-On Time(Resistive Load) 10000 V =125V B(on) ...

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