2sa2154ct TOSHIBA Semiconductor CORPORATION, 2sa2154ct Datasheet

no-image

2sa2154ct

Manufacturer Part Number
2sa2154ct
Description
Toshiba Transistor Silicon Pnp Epitaxial Type Pct Process
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SA2154CT
Manufacturer:
TOSHIBA
Quantity:
42 000
Part Number:
2sa2154ct-Y
Manufacturer:
TOSHIBA
Quantity:
20 000
General Purpose Amplifier Applications
Absolute Maximum Ratings
Electrical Characteristics
Note:
Marking
* : Mounted on FR4 board (10 mm × 10 mm × 1 mmt)
High voltage and high current : V
High h
Complementary to 2SC6026CT
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Excellent h
2
1
FE
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
h
( ) marking symbol
FE
Characteristics
Characteristics
classification Y (F): 120 to 240, GR (H): 200 to 400
FE
: h
:
8F
h
FE
FE
linearity
= 120 to 400
(I
C
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
= −0.1 mA) / h
Type Name
3
h
FE
Rank
CEO
(Ta = 25°C)
FE
(Ta = 25°C)
h
= −50V, I
2SA2154CT
V
FE
Symbol
Symbol
(I
V
V
V
CE (sat)
I
I
C
T
CBO
EBO
C
P
CBO
CEO
EBO
I
I
T
(Note)
f
stg
C
B
T
ob
C
= −2 mA)= 0.95 (typ.)
j
C
= −100mA (max)
V
V
V
I
V
V
C
CB
EB
CE
CE
CB
−55 to 150
= −100 mA, I
Rating
= −50 V, I
= −5 V, I
= −6 V, I
= −10 V, I
= −10 V, I
−100
100*
−50
−50
−30
150
−5
1
Test Condition
C
C
E
C
E
= 0
= −2 mA
B
= 0
= 0, f = 1 MHz
= −1 mA
= −10 mA
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.75 mg (typ.)
JEDEC
JEITA
TOSHIBA
CST3
0.15±0.03
120
Min
80
0.6±0.05
0.5±0.03
0.35±0.02
−0.18
Typ.
1.6
1.BASE
2.EMITTER
3.COLLECTOR
2SA2154CT
2-1J1A
0.05±0.03
2009-04-13
−0.1
−0.1
−0.3
Max
400
Unit: mm
MHz
Unit
μA
μA
pF
V

Related parts for 2sa2154ct

2sa2154ct Summary of contents

Page 1

... I = − (sat − − − MHz 2SA2154CT 0.6±0.05 0.5±0.03 3 1 2 V 0.35±0.02 0.05±0.03 V 0.15±0.03 V 1.BASE 2.EMITTER CST3 3.COLLECTOR JEDEC ― JEITA ― TOSHIBA 2-1J1A Weight: 0.75 mg (typ.) Min Typ ...

Page 2

... -1.2 -1.4 ( 2SA2154CT hFE - IC h – 100℃ 25 -25 COMMON EMITTER Common emitter    VCE=−6V = − −   VCE=− -10 Collector current I (mA) ...

Page 3

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 3 2SA2154CT 2009-04-13 ...

Related keywords