bfp620-e7764 Infineon Technologies Corporation, bfp620-e7764 Datasheet

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bfp620-e7764

Manufacturer Part Number
bfp620-e7764
Description
Npn Silicon Germanium Rf Transistor
Manufacturer
Infineon Technologies Corporation
Datasheet
NPN Silicon Germanium RF Transistor






ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!
Type
BFP620_E7764
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1 T
2 For calculation of R
S
High gain low noise RF transistor
Provides outstanding performance
Ideal for CDMA and WLAN applications
Outstanding noise figure F = 0.7 dB at 1.8 GHz
Maximum stable gain
Gold metallization for extra high reliability
for a wide range of wireless applications
Outstanding noise figure F = 1.3 dB at 6 GHz
G
G
S is measured on the collector lead at the soldering point to the pcb

ms
ma
95°C
= 21.5 dB at 1.8 GHz
= 11 dB at 6 GHz
thJA
Marking
R2s
please refer to Application Note Thermal Resistance
1)
2)
1=B
2=E
Pin Configuration
3=C
1
Symbol
V
V
V
V
I
I
P
T
T
T
Symbol
R
C
B
j
A
stg
CEO
CES
CBO
EBO
tot
thJS
4=E
-
4
-65 ... 150
-65 ... 150
-

Value
Value
3
185
150
2.3
7.5
7.5
1.2
80
300
3
BFP620_E7764
Package
SOT343
1
Jul-03-2003
VPS05605
2
Unit
V
mA
mW
°C
Unit
K/W

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bfp620-e7764 Summary of contents

Page 1

... Application Note Thermal Resistance thJA 4 Pin Configuration 2=E 3=C 4 Symbol Value V CEO V CES V CBO V EBO tot -65 ... 150 A T -65 ... 150 stg Symbol Value R  thJS 1 BFP620_E7764 VPS05605 Package SOT343 Unit 2.3 V 7.5 7.5 1 185 mW 150 °C Unit K/W 300 Jul-03-2003 ...

Page 2

... Emitter-base cutoff current = 0 current gain mA 1 25°C, unless otherwise specified A Symbol min. 2.3 V (BR)CEO I CES I CBO I EBO 100 BFP620_E7764 Values Unit typ. max. 2 µ 100 µA 180 320 - Jul-03-2003 ...

Page 3

... Symbol min Sopt = Z S Sopt Sopt Sopt 21e = -1dB = 21e 12e from 0.1 MHz to 6 GHz  3 BFP620_E7764 Values Unit typ. max GHz - 0. dBm - 15 - Jul-03-2003 ...

Page 4

... LEC = LBB = LCB = LEB = + CBEC = 98 CBCC = 55.9 CES = CBS = CCS = CCEO = 106 CBEO = 106.7 CCEI = CBEI = RBS = RCS = RES = Valid up to 6GHz 4 BFP620_E7764 1.025 - 1.522 mA 2.364  0.3 - 1.5 V 124 0.52 V 1.078 eV 298 ...

Page 5

... T ) Permissible Pulse Load K 120 °C 150 Collector-base capacitance 1MHz 0.4 pF 0.3 0.25 0.2 0.15 0.1 0. ° BFP620_E7764 = ( thJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 ° ...

Page 6

... I C Power Gain |² ( 1.5V 50mA 0 1 2.4 Gms |S21|² BFP620_E7764 = ( 1.3 to 2.3 1 0.8 0.5 0 100 Gma GHz Jul-03-2003 ...

Page 7

... Power gain 50mA Parameter in GHz 0.2 0.6 1 1.4 1.8 ) 0.9 1 BFP620_E7764 Jul-03-2003 ...

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