bfp620fe7764 Infineon Technologies Corporation, bfp620fe7764 Datasheet

bfp620fe7764

Manufacturer Part Number

bfp620fe7764

Description

Npn Silicon Germanium Rf Transistor

Manufacturer

Infineon Technologies Corporation

Datasheet

1.BFP620FE7764.pdf (6 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BFP620FE7764

Manufacturer:

INFINEON

Quantity:

576

Current page: 1 of 6
Download datasheet (127Kb)

• Maximum stable gain

Total power dissipation

Junction - soldering point

1 T

2 For calculation of R

NPN Silicon Germanium RF Transistor

Preliminary data

• High gain low noise RF transistor

• Small package 1.4 x 0.8 x 0.59 mm

• Outstanding noise figure F = 0.7 dB at 1.8 GHz

• Gold metallization for extra high reliability

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

BFP620F E7764

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Junction temperature

Ambient temperature

Storage temperature

Thermal Resistance

Parameter

Outstanding noise figure F = 1.3 dB at 6 GHz

S is measured on the collector lead at the soldering point to the pcb

≤ 96°C

= 21 dB at 1.8 GHz

= 10 dB at 6 GHz

thJA

Marking

R2s

please refer to Application Note Thermal Resistance

1=B

2=E

Pin Configuration

3=C

Symbol

CEO

CES

CBO

EBO

tot

stg

thJS

4=E

TSFP-4

d i r e c t i o n o f u n r e e l i n g

-65 ... 150

Value

≤ 290

185

150

t o p v i e w

2.3

7.5

1.2

BFP620F E7764

A C s

Package

TSFP-4

Oct-20-2003

°C

K/W

Unit

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bfp620fe7764 Summary of contents

Page 1

NPN Silicon Germanium RF Transistor Preliminary data • High gain low noise RF transistor • Small package 1.4 x 0.8 x 0.59 mm • Outstanding noise figure 1.8 GHz Outstanding noise figure F = 1.3 ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 1 GHz C CE Collector-base capacitance MHz CB Collector emitter ...

Page 4

SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: 0. 1000 V VAF = VAR = 2.707 RBM = Ω 250.7 fF CJE = 1.43 ps ...

Page 5

Total power dissipation P = ƒ(T tot 200 mW 160 140 120 100 105 120 °C Permissible Pulse Load ƒ(t ) totmax totDC p 1 ...

Page 6

Transition frequency f = ƒ( 1GHz V = Parameter GHz 0 ...

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