2sc2996 TOSHIBA Semiconductor CORPORATION, 2sc2996 Datasheet

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2sc2996

Manufacturer Part Number
2sc2996
Description
Toshiba Transistor Silicon Npn Epitaxial Type Pct Process
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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FM/AM RF, MIX, Local, IF
High Frequency Amplifier Applications
Absolute Maximum Ratings
Electrical Characteristics
High stability oscillation voltage on FM local oscillator
Recommend FM/AM RF, MIX, local and IF
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Collector cut-off current
Emitter cut-off current
DC current gain
Reverse transfer capacitance
Transition frequency
Collector-base time constant
Noise figure
Power gain
Oscillation output voltage
Note: h
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
FE
Characteristics
Characteristics
classification R: 40~80, O: 70~140, Y: 120~240
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
(Ta = 25°C)
(Ta = 25°C)
Symbol
Symbol
C
V
V
V
V
I
I
T
c
G
CBO
EBO
h
C
P
NF
CBO
CEO
EBO
OSC
I
I
T
f
stg
FE
C
E
T
pe
re
rbb’
C
2SC2996
j
(Note)
V
V
V
V
V
V
V
(Figure 1)
V
CB
EB
CE
CB
CE
CE
CE
CE
−55~125
Rating
= 40 V, I
= 4 V, I
= 6 V, I
= 6 V, f = 1 MHz
= 6 V, I
= 6 V, I
= 6 V, I
= 6 V, f = 100 MHz (Figure 2)
−50
150
125
40
30
50
4
1
C
C
C
E
E
Test Condition
E
= 0
= −1 mA, f = 30 MHz
= −1 mA, f = 100 MHz
= 1 mA
= −1 mA
= 0
Unit
wW
mA
mA
°C
°C
V
V
V
Weight: 0.012 g (typ.)
JEDEC
JEITA
TOSHIBA
150
Min
40
Typ.
350
180
0.9
4.0
15
15
TO-236
2-3F1A
2007-11-01
2SC2996
Max
240
0.1
0.5
1.3
30
Unit: mm
MHz
Unit
mV
μA
μA
pF
dB
dB
ps

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2sc2996 Summary of contents

Page 1

... ・ −1 mA 100 MHz (Figure 100 MHz (Figure OSC CE 1 2SC2996 JEDEC TO-236 JEITA ― TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Min Typ. Max ⎯ ⎯ 0.1 ⎯ ⎯ 0.5 ⎯ ...

Page 2

... L : 0.8 mmφ silver plated copper wire 10ID, 8 length 0.8 mmφ silver plated copper wire 10ID, 8 length 1 Marking Figure 1 NF, G Test Circuit pe Figure 2 V Test Circuit OSC 2 2SC2996 2007-11-01 ...

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Page 7

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2SC2996 20070701-EN GENERAL 2007-11-01 ...

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