2sc4809j Panasonic Corporation of North America, 2sc4809j Datasheet

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2sc4809j

Manufacturer Part Number
2sc4809j
Description
For High-frequency Amplification/oscillation/mixing
Manufacturer
Panasonic Corporation of North America
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2sc4809j0L
Manufacturer:
MURATA
Quantity:
460 000
Transistors
2SC4809J
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: August 2003
• High transition frequency f
• Small collector output capacitance (Common base, input open cir-
• SS-Mini type package, allowing downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
h
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Reverse transfer capacitance
(Common emitter)
Collector-base parameter
cuited) C
automatic insertion through the tape packing
FE
ratio
2. * :∆h
*
ob
Parameter
FE
and reverse transfer capacitance (Common emitter) C
Parameter
= h
FE2
/ h
FE1
T
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
r
T
V
bb
P
CBO
I
T
V
V
CEO
EBO
a
∆h
I
stg
C
CE(sat)
C
C
h
C
CBO
' • C
j
f
CEO
EBO
= 25°C
FE
T
ob
rb
FE
C
−55 to +125
Rating
I
I
V
V
h
h
I
V
V
V
V
C
E
C
FE2
FE1
125
125
CB
CE
CB
CB
CB
CB
15
10
50
= 2 mA, I
= 10 µA, I
= 20 mA, I
3
: V
: V
SJC00303AED
= 4 V, I
= 4 V, I
= 4 V, I
= 10 V, I
= 4 V, I
= 4 V, I
CE
CE
= 4 V, I
= 4 V, I
B
E
E
C
E
E
C
Conditions
Unit
B
mW
E
mA
= −5 mA, f = 200 MHz
= −5 mA, f = 31.9 MHz
= 0
= 5 mA
= 0, f = 1 MHz
= 0, f = 1 MHz
°C
°C
= 0
V
V
V
= 4 mA
= 0
C
C
rb
= 5 mA
= 100 µA
Marking Symbol: 1S
0.27
±0.02
(0.50)(0.50)
1.60
1.00
1
3
0.75
Min
1.4
10
75
3
+0.05
–0.03
±0.05
2
0.45
Typ
1.9
1.4
11
SSMini3-F1 Package
Max
0.12
400
1.6
0.5
2.7
1
+0.03
–0.01
EIAJ: SC-89
1: Base
2: Emitter
3: Collector
Unit : mm
GHz
Unit
µA
pF
pF
ps
V
V
V
1

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2sc4809j Summary of contents

Page 1

... Transistors 2SC4809J Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing ■ Features • High transition frequency f T • Small collector output capacitance (Common base, input open cir- cuited) C and reverse transfer capacitance (Common emitter • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing ■ ...

Page 2

... 140 120 100 100 120 140 ( °C ) Ambient temperature T a  CE(sat 0.1 = 85°C −25° 25°C 0.01 0 100 1 000 ( mA ) Collector current  25°C ...

Page 3

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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