2sc4809j

Manufacturer Part Number2sc4809j
DescriptionFor High-frequency Amplification/oscillation/mixing
ManufacturerPanasonic Corporation of North America
2sc4809j datasheet
 


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Transistors
2SC4809J
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■ Features
• High transition frequency f
T
• Small collector output capacitance (Common base, input open cir-
cuited) C
and reverse transfer capacitance (Common emitter) C
ob
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*
h
ratio
FE
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Reverse transfer capacitance
(Common emitter)
Collector-base parameter
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
= h
2. * :∆h
/ h
FE
FE2
FE1
Publication date: August 2003
rb
= 25°C
a
Symbol
Rating
Unit
V
15
V
CBO
V
10
V
CEO
V
3
V
EBO
I
50
mA
C
P
125
mW
C
°C
T
125
j
−55 to +125
°C
T
stg
= 25°C ± 3°C
a
Symbol
Conditions
= 2 mA, I
= 0
V
I
CEO
C
B
= 10 µA, I
= 0
V
I
EBO
E
C
= 10 V, I
= 0
I
V
CBO
CB
E
= 4 V, I
= 5 mA
h
V
FE
CE
C
∆h
= 4 V, I
= 100 µA
h
: V
FE
FE2
CE
C
= 4 V, I
= 5 mA
h
: V
FE1
CE
C
= 20 mA, I
= 4 mA
V
I
CE(sat)
C
B
= 4 V, I
= −5 mA, f = 200 MHz
f
V
T
CB
E
= 4 V, I
= 0, f = 1 MHz
C
V
ob
CB
E
= 4 V, I
= 0, f = 1 MHz
C
V
rb
CB
E
= 4 V, I
= −5 mA, f = 31.9 MHz
r
' • C
V
bb
C
CB
E
SJC00303AED
Unit : mm
+0.05
1.60
–0.03
+0.03
0.12
–0.01
1.00
±0.05
3
1
2
0.27
±0.02
(0.50)(0.50)
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Marking Symbol: 1S
Min
Typ
Max
10
3
1
75
400
0.75
1.6
0.5
1.4
1.9
2.7
1.4
0.45
11
Unit
V
V
µA
V
GHz
pF
pF
ps
1

2sc4809j Summary of contents

  • Page 1

    ... Transistors 2SC4809J Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing ■ Features • High transition frequency f T • Small collector output capacitance (Common base, input open cir- cuited) C and reverse transfer capacitance (Common emitter • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing ■ ...

  • Page 2

    ... 140 120 100 100 120 140 ( °C ) Ambient temperature T a  CE(sat 0.1 = 85°C −25° 25°C 0.01 0 100 1 000 ( mA ) Collector current  25°C ...

  • Page 3

    Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...