2sc4809g

Manufacturer Part Number2sc4809g
DescriptionSmall Silicon Npn Epitaxial Planar Type Transistors
ManufacturerPanasonic Corporation of North America
2sc4809g datasheet
 
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This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC4809G
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■ Features
• High transition frequency f
T
• Small collector output capacitance (Common base, input open cir-
cuited) C
and reverse transfer capacitance (Common emitter) C
ob
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*
h
ratio
FE
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Reverse transfer capacitance
(Common emitter)
Collector-base parameter
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
= h
2. * :∆h
/ h
FE
FE2
FE1
Publication date: May 2007
rb
= 25°C
a
Symbol
Rating
Unit
V
15
V
CBO
V
10
V
CEO
V
3
V
EBO
I
50
mA
C
P
125
mW
C
°C
T
125
j
−55 to +125
°C
T
stg
= 25°C ± 3°C
a
Symbol
Conditions
= 2 mA, I
= 0
V
I
CEO
C
B
= 10 µA, I
= 0
V
I
EBO
E
C
= 10 V, I
= 0
I
V
CBO
CB
E
= 4 V, I
= 5 mA
h
V
FE
CE
C
∆h
= 4 V, I
= 100 µA
h
: V
FE
FE2
CE
C
= 4 V, I
= 5 mA
h
: V
FE1
CE
C
= 20 mA, I
= 4 mA
V
I
CE(sat)
C
B
= 4 V, I
= −5 mA, f = 200 MHz
f
V
T
CB
E
= 4 V, I
= 0, f = 1 MHz
C
V
ob
CB
E
= 4 V, I
= 0, f = 1 MHz
C
V
rb
CB
E
= 4 V, I
= −5 mA, f = 31.9 MHz
r
' • C
V
bb
C
CB
E
SJC00396AED
■ Package
• Code
SSMini3-F3
• Marking Symbol: 1S
• Pin Name
1. Base
2. Emitter
3. Collector
Min
Typ
Max
Unit
10
V
3
V
µA
1
75
400
0.75
1.6
0.5
V
1.4
1.9
2.7
GHz
1.4
pF
0.45
pF
11
ps
1

2sc4809g Summary of contents

  • Page 1

    ... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC4809G Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing ■ Features • High transition frequency f T • Small collector output capacitance (Common base, input open cir- cuited) C and reverse transfer capacitance (Common emitter • ...

  • Page 2

    ... This product complies with the RoHS Directive (EU 2002/95/EC). 2SC4809G  140 120 100 100 120 140 ( °C ) Ambient temperature T a  CE(sat 0.1 = 85°C −25° 25°C 0.01 0 100 ...

  • Page 3

    This product complies with the RoHS Directive (EU 2002/95/EC). SSMini3-F3 +0.05 1.60 − 0.03 +0.05 0.26 − 0. (0.50) (0.50) 1.00 ±0.05 (5°) Unit: mm +0.05 0.13 − 0.02 ...

  • Page 4

    Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...