2sc4809g Panasonic Corporation of North America, 2sc4809g Datasheet

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2sc4809g

Manufacturer Part Number
2sc4809g
Description
Small Silicon Npn Epitaxial Planar Type Transistors
Manufacturer
Panasonic Corporation of North America
Datasheet
Transistors
2SC4809G
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2007
• High transition frequency f
• Small collector output capacitance (Common base, input open cir-
• SS-Mini type package, allowing downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
h
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Reverse transfer capacitance
(Common emitter)
Collector-base parameter
cuited) C
automatic insertion through the tape packing
FE
ratio
2. * :∆h
*
ob
Parameter
FE
and reverse transfer capacitance (Common emitter) C
Parameter
= h
FE2
/ h
FE1
This product complies with the RoHS Directive (EU 2002/95/EC).
T
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
r
T
V
bb
P
CBO
I
T
V
V
CEO
EBO
a
∆h
I
stg
C
CE(sat)
C
C
h
C
CBO
' • C
j
f
CEO
EBO
= 25°C
FE
T
ob
rb
FE
C
−55 to +125
Rating
I
I
V
V
h
h
I
V
V
V
V
C
E
C
FE2
FE1
125
125
CB
CE
CB
CB
CB
CB
15
10
50
= 2 mA, I
= 10 µA, I
= 20 mA, I
3
: V
: V
SJC00396AED
= 4 V, I
= 4 V, I
= 4 V, I
= 10 V, I
= 4 V, I
= 4 V, I
CE
CE
= 4 V, I
= 4 V, I
B
E
E
C
E
E
C
Conditions
Unit
B
mW
E
mA
= −5 mA, f = 200 MHz
= −5 mA, f = 31.9 MHz
= 0
= 5 mA
= 0, f = 1 MHz
= 0, f = 1 MHz
°C
°C
= 0
V
V
V
= 4 mA
= 0
C
C
rb
= 5 mA
= 100 µA
■ Package
• Code
• Marking Symbol: 1S
• Pin Name
SSMini3-F3
1. Base
2. Emitter
3. Collector
0.75
Min
1.4
10
75
3
0.45
Typ
1.9
1.4
11
Max
400
1.6
0.5
2.7
1
GHz
Unit
µA
pF
pF
ps
V
V
V
1

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2sc4809g Summary of contents

Page 1

... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC4809G Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing ■ Features • High transition frequency f T • Small collector output capacitance (Common base, input open cir- cuited) C and reverse transfer capacitance (Common emitter • ...

Page 2

... This product complies with the RoHS Directive (EU 2002/95/EC). 2SC4809G  140 120 100 100 120 140 ( °C ) Ambient temperature T a  CE(sat 0.1 = 85°C −25° 25°C 0.01 0 100 ...

Page 3

This product complies with the RoHS Directive (EU 2002/95/EC). SSMini3-F3 +0.05 1.60 − 0.03 +0.05 0.26 − 0. (0.50) (0.50) 1.00 ±0.05 (5°) Unit: mm +0.05 0.13 − 0.02 ...

Page 4

Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...

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