si7190dp Vishay, si7190dp Datasheet

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si7190dp

Manufacturer Part Number
si7190dp
Description
N-channel 250-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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SI7190DP
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ATMEL
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Part Number:
si7190dp-T1-GE3
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si7190dp-T1-GE3
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Part Number:
si7190dp-T1-GE3
Quantity:
70 000
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
g. Based on T
Document Number: 68985
S-82585-Rev. A, 27-Oct-08
Ordering Information: Si7190DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
250
(V)
8
6.15 mm
D
7
C
D
= 25 °C.
6
0.118 at V
0.124 at V
D
PowerPAK SO-8
Bottom View
R
5
http://www.vishay.com/ppg?73461
DS(on)
D
GS
GS
(Ω)
J
1
= 10 V
= 6 V
= 150 °C)
S
b, f
2
S
N-Channel 250-V (D-S) MOSFET
3
S
5.15 mm
4
I
G
D
18.4
18.0
(A)
g
d, e
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
A
= 25 °C, unless otherwise noted
Q
Steady State
g
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
(Typ.)
32
t ≤ 10 s
New Product
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free
• TrenchFET
• Low Thermal Resistance PowerPAK
• 100 % R
• 100 % UIS Tested
• Primary Side Switch
• Industrial
• POL
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
DM
I
I
AS
thJA
thJC
GS
DS
AS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
1.0
18
- 55 to 150
G
4.4
3.5
4.5
5.4
3.5
Limit
± 20
18.4
14.7
61.5
250
30
260
9.8
30
14
96
N-Channel MOSFET
b, c
b, c
b, c
b, c
b, c
a
Maximum
1.3
23
Vishay Siliconix
D
S
®
Si7190DP
Package
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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si7190dp Summary of contents

Page 1

... Bottom View Ordering Information: Si7190DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation ...

Page 2

... Si7190DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Document Number: 68985 S-82585-Rev. A, 27-Oct-08 New Product 3200 2400 1600 800 2.5 2.0 1 1.0 0 Si7190DP Vishay Siliconix ° 125 ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss ...

Page 4

... Si7190DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 4.0 3.5 3.0 2.5 2 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.25 0.20 0. °C J 0.10 0.05 0.9 1.2 100 250 µ 100 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 2.4 2.0 1.6 1.2 0.8 0.4 0.0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si7190DP Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... Si7190DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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