zvn4306gv Zetex Semiconductors plc., zvn4306gv Datasheet
zvn4306gv
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zvn4306gv Summary of contents
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... Gate Source Voltage Power Dissipation at T amb Avalanche Current-Repetitive Avalanche Energy-Repetitive Operating and Storage Temperature Range ZVN4306V SYMBOL V DS =25°C I amb =25°C P tot stg ZVN4306GV VALUE UNIT -55 to +150 °C S ...
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... ZVN4306GV ELECTRICAL CHARACTERISTICS (at T PARAMETER SYMBOL MIN. Drain-Source BV Breakdown Voltage Gate-Source V GS(th) Threshold Voltage Gate-Body Leakage I GSS Zero Gate Voltage I DSS Drain Current On-State Drain I D(on) Current(1) Static Drain-Source R DS(on) On-State Resistance (1) Forward g fs Transconductance (1) Input Capacitance (2) C iss Common Source C oss Output Capacitance ...
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... GS(TH) 0 150 175 200 225 Transconductance v drain current v Temperature iss oss 2 C rss Gate charge v gate-source voltage ZVN4306GV V =3V 3. 10V Drain Current (Amps 10V DS Drain Current (Amps ) ...
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