si7866adp Vishay, si7866adp Datasheet
si7866adp
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si7866adp Summary of contents
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... Bottom View Ordering Information: Si7866ADP-T1-E3 (Lead (Pb)-free) Si7866ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current ...
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... Si7866ADP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... On-Resistance vs. Drain Current and Gate Voltage Total Gate Charge (nC) g Gate Charge Document Number: 73380 S-80440-Rev. C, 03-Mar-08 0.6 0.8 1 Si7866ADP Vishay Siliconix 1.2 1.0 0.8 0 125 °C C 0.4 0.2 25 °C 0.0 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 7000 C 6000 5000 4000 3000 2000 ...
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... Si7866ADP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.01 0.00 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 0.0 - 0 250 D - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.010 0.008 0.006 0.004 °C J 0.002 0.000 0.8 1.0 1.2 200 160 ...
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... Package Limited 100 T - Case Temperature (°C) C Current Derating* 100 125 150 = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si7866ADP Vishay Siliconix 125 150 2.5 2.0 1.5 1.0 0.5 0 100 T - Case Temperature (°C) C Power, Junction-to-Ambient www ...
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... Si7866ADP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...