si7884bdp Vishay, si7884bdp Datasheet

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si7884bdp

Manufacturer Part Number
si7884bdp
Description
Vishay Siliconix
Manufacturer
Vishay
Datasheet

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Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under Steady State conditions is 70 °C/W.
f. Calculation based on maximum allowable junction temperature. Package limitation current is 32 A.
Document Number: 68395
S-82113-Rev. B, 08-Sep-08
Ordering Information: Si7884BDP-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
V
DS
40
(V)
8
6.15 mm
D
7
D
0.0075 at V
0.009 at V
6
D
PowerPAK SO-8
Bottom View
Si7884BDP-T1-GE3 (Lead (Pb)-free and Halogen-free)
5
R
http://www.vishay.com/ppg?73257
DS(on)
D
GS
GS
J
(Ω)
1
= 4.5 V
= 150 °C)
= 10 V
S
a, e
2
S
N-Channel 40-V (D-S) MOSFET
3
S
5.15 mm
4
I
D
G
58
53
(A)
Steady State
f
c, d
t ≤ 10 s
T
T
T
T
T
T
T
T
T
T
L = 0.1 mH
C
C
A
A
C
A
C
C
A
A
A
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Q
= 25 °C, unless otherwise noted
21 nC
g
(Typ.)
New Product
Symbol
R
R
thJA
thJC
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
AS
I
DS
GS
D
AS
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free Option Available
• TrenchFET
• 100 % R
• Synchronous Rectifier
Typical
2.2
22
g
and UIS Tested
®
Power MOSFET
G
- 55 to 150
N-Channel MOSFET
18.5
14.8
3.8
4.6
3.0
Limit
± 20
260
58
46
38
40
50
33
54
46
29
a, b
a, b
a, b
a, b
a, b
f
f
f
D
S
Maximum
2.7
27
Vishay Siliconix
Si7884BDP
www.vishay.com
°C/W
Unit
Unit
RoHS
COMPLIANT
mJ
°C
W
V
A
A
1

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si7884bdp Summary of contents

Page 1

... Bottom View Ordering Information: Si7884BDP-T1-E3 (Lead (Pb)-free) Si7884BDP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Avalanche Energy Continuous Source-Drain Diode Current ...

Page 2

... Si7884BDP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Document Number: 68395 S-82113-Rev. B, 08-Sep-08 New Product 1.5 2.0 4000 = 4.5 V 3200 2400 = 10 V 1600 Si7884BDP Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss ...

Page 4

... Si7884BDP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.6 0 250 µ 0 0.3 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.03 0. °C J 0.01 0.00 0.8 1.0 1 ...

Page 5

... Document Number: 68395 S-82113-Rev. B, 08-Sep-08 New Product 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si7884BDP Vishay Siliconix 100 125 T - Junction Temperature (°C) J Power Derating www.vishay.com 150 5 ...

Page 6

... Si7884BDP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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