si7888dp-t1 Vishay, si7888dp-t1 Datasheet
si7888dp-t1
Available stocks
Related parts for si7888dp-t1
si7888dp-t1 Summary of contents
Page 1
... V GS PowerPAK SO Bottom View Ordering Information: Si7888DP-T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current ...
Page 2
... Si7888DP Vishay Siliconix MOSFET SPECIFICATIONS (T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge ...
Page 3
... V - Source-to-Drain Voltage (V) SD Document Number: 71876 S-31727—Rev. B, 18-Aug- 0.05 0.04 0.03 0. 25_C J 0.01 0.00 0.8 1.0 1.2 Si7888DP Vishay Siliconix Capacitance 1200 1000 C iss 800 600 C oss 400 C rss 200 Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...
Page 4
... Si7888DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0 250 mA 0 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 Safe Operating Area 100 r Limited DS(on D(on) ...
Page 5
... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 71876 S-31727—Rev. B, 18-Aug- Square Wave Pulse Duration (sec) Si7888DP Vishay Siliconix - www.vishay.com 5 ...