si7386dp Vishay, si7386dp Datasheet

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si7386dp

Manufacturer Part Number
si7386dp
Description
N-channel Reduced Qg, Fast Switching Mosfet
Manufacturer
Vishay
Datasheet

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Part Number:
SI7386DP
Manufacturer:
NS
Quantity:
13
Part Number:
si7386dp-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
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Part Number:
si7386dp-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si7386dp-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
42 016
Part Number:
si7386dp-T1-GE3
Manufacturer:
LTC
Quantity:
393
Part Number:
si7386dp-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
b. See Solder Profile (
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73108
S-80439-Rev. C, 03-Mar-08
a. Surface Mounted on 1" x 1" FR4 board.
Ordering Information: Si7386DP-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
30
(V)
8
6.15 mm
D
7
D
0.0095 at V
0.007 at V
6
N-Channel Reduced Q
D
PowerPAK SO-8
R
Si7386DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
5
h
Bottom View
DS(on)
ttp://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
D
GS
GS
(Ω)
= 10 V
1
J
a
= 4.5 V
S
= 150 °C)
2
S
3
S
a
5.15 mm
4
a
I
D
G
19
17
(A)
a
b, c
A
Q
= 25 °C, unless otherwise noted
g
Steady State
Steady State
11.5
T
T
L = 0.1 mH
T
T
(Typ.)
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
g
, Fast Switching MOSFET
FEATURES
APPLICATIONS
G
• Halogen-free available
• TrenchFET
• PWM Optimized for High Efficiency
• New Low Thermal Resistance PowerPAK
• 100 % R
• DC/DC Conversion for PC
Symbol
Symbol
T
R
R
Package with Low 1.07 mm Profile
N-Channel MOSFET
J
V
V
E
I
I
P
, T
I
DM
thJA
thJC
I
AS
DS
GS
D
S
AS
D
stg
D
S
g
Tested
®
Gen II Power MOSFET
Typical
10 s
4.1
3.2
2.4
19
16
21
56
5
- 55 to 150
± 20
± 50
260
30
25
32
Steady State
Maximum
1.5
1.8
1.1
3.0
12
25
70
Vishay Siliconix
9
Si7386DP
www.vishay.com
®
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
1

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si7386dp Summary of contents

Page 1

... Bottom View Ordering Information: Si7386DP-T1-E3 (Lead (Pb)-free) Si7386DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current ...

Page 2

... Si7386DP Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...

Page 3

... Source-Drain Diode Forward Voltage Document Number: 73108 S-80439-Rev. C, 03-Mar- 0.030 0.024 0.018 0.012 °C 0.006 J 0.000 0.8 1.0 1.2 Si7386DP Vishay Siliconix 2200 C iss 1760 1320 880 C oss 440 C rss Drain-to-Source Voltage (V) DS Capacitance 1.8 V ...

Page 4

... Si7386DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0 250 µA 0.2 D 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited by R DS(on D(on) Limited °C C 0.1 Single Pulse BV Limited DSS ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73108. Document Number: 73108 S-80439-Rev. C, 03-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7386DP Vishay Siliconix - www.vishay.com 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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