si7308dn Vishay, si7308dn Datasheet

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si7308dn

Manufacturer Part Number
si7308dn
Description
N-channel 60-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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si7308dn-T1-GE3
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si7308dn-T1-GE3
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Quantity:
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Part Number:
si7308dn-T1-GE3
0
Notes:
a.
b.
c.
d.
e.
f.
Document Number: 73419
S-51050—Rev. A, 30-May-05
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (10 ms Width)
Continuous Source Drain Diode Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Package Limited.
Surface Mounted on 1” x 1” FR4 Board.
t = 10 sec
See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Maximum under steady state conditions is 81_C/W.
DS
60
60
(V)
Ordering Information: Si7308DN-T1—E3 (Lead (Pb)-Free)
0.072 @ V
0.058 @ V
r
8
DS(on)
3.30 mm
D
J
J
7
= 150_C)
= 150_C)
b, f
GS
GS
D
Parameter
Parameter
(W)
= 4.5 V
= 10 V
6
D
PowerPAK 1212-8
5
D
N-Channel 60-V (D-S) MOSFET
1
I
D
S
(A)
6
6
2
S
a
3
A
S
3.30 mm
= 25_C UNLESS OTHERWISE NOTED)
Steady State
4
Q
L = 0 1 mH
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
G
C
C
A
A
C
A
C
C
A
A
g
New Product
13 nC
13 nC
= 25_C
= 70_C
= 25_C
= 70_C
= 25_C
= 25_C
= 25_C
= 70_C
= 25_C
= 70_C
(Typ)
FEATURES
D TrenchFETr Power MOSFET
D Low Thermal Resistance PowerPAKr Package
APPLICATIONS
D CCFL Inverter
D Class-D Amp
Symbol
Symbol
T
R
R
with Small Size and Low 1.07 mm Profile
V
V
J
E
I
I
P
P
, T
DM
thJC
I
I
I
I
AS
thJA
DS
GS
D
D
S
S
AS
D
D
stg
Typical
G
31
5
N-Channel MOSFET
−55 to 150
Limit
5.4
4.3
2.7
3.2
2.1
"20
19.8
12.7
6.1
60
6
6
20
6
11
a
a
b, c
b, c
a
b, c
b, c
b, c
D
S
Maximum
Vishay Siliconix
6.3
39
Si7308DN
www.vishay.com
Unit
Unit
_C/W
_C/W
mJ
_C
W
W
V
V
A
A
COMPLIANT
1

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si7308dn Summary of contents

Page 1

... PowerPAK 1212-8 3. Ordering Information: Si7308DN-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current (10 ms Width) Continuous Source-Drain Diode Current Continuous Source Drain Diode Current ...

Page 2

... Si7308DN Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance ...

Page 3

... Q − Total Gate Charge (nC) g Document Number: 73419 S-51050—Rev. A, 30-May-05 New Product 1.4 1.6 1.8 2 Si7308DN Vishay Siliconix Transfer Characteristics 125_C C 1 25_C 0 0.0 0.5 1.0 1.5 2.0 2.5 V − Gate-to-Source Voltage (V) GS Capacitance 1000 800 C ...

Page 4

... Si7308DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 0.0 0.2 0.4 0.6 0.8 V − Source-to-Drain Voltage (V) SD Threshold Voltage 3.0 2 250 mA 2.6 D 2.4 2.2 2.0 1.8 1.6 1.4 −50 − − Temperature (_C) J www.vishay.com 4 New Product 0.12 0.11 0.10 0.09 0.08 0. 25_C J 0.06 0.05 0.04 1.0 1.2 1.4 100 125 150 Safe Operating Area ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73419 S-51050—Rev. A, 30-May-05 New Product 125 150 0.001 Si7308DN Vishay Siliconix Power De-Rating 100 125 T − Case Temperature (_C) C www.vishay.com ...

Page 6

... Si7308DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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