bsc119n03s Infineon Technologies Corporation, bsc119n03s Datasheet
bsc119n03s
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bsc119n03s Summary of contents
Page 1
... /dt di /dt =200 A/µs, T =150 °C j,max =25 °C tot C T =25 ° =45 K/W thJA stg page 1 BSC119N03S 11 P-TDSON-8 P-TDSON-8 Value Unit 11.9 120 kV/µs ± 2.8 -55 ... 150 °C 55/150/56 ...
Page 2
... V = GSS =4 =25 A DS( |>2 DS(on)max = (one layer, 70 µm thick) copper area for drain page 2 BSC119N03S G Values Unit typ. max 2.9 K 1.2 1 0.1 1 µ 100 - 10 100 nA - 14.4 18 ...
Page 3
... = oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 BSC119N03S G Values Unit typ. max. - 1030 1370 pF - 370 490 - 3.8 5 3.4 5 2.6 3.9 - 3.3 4 1.6 2.2 - 2.1 3 ...
Page 4
... Max. transient thermal impedance Z =f(t ) thJC p parameter µs 0.5 10 µ 0.2 100 µs 0 0.01 single pulse -2 10 0.01 10 100 page 4 BSC119N03S 120 160 T [° [s] p 2004-12-15 ...
Page 5
... DS(on parameter 3 3 3 Typ. forward transconductance g =f =25 ° ° page 5 BSC119N03S G 3 [A] D 2004-12-15 ...
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... I D 2.5 2 1.5 1 0.5 0 100 140 180 -60 -20 12 Forward characteristics of reverse diode I =f parameter page 6 BSC119N03S 200 µA 20 µ 100 140 180 T [°C] j 150 °C, 98% 150 °C 25 °C 25 °C, 98% 0 [V] SD 2004-12-15 ...
Page 7
... Typ. gate charge V =f =15 A pulsed GS gate D parameter ° 100 1000 0 16 Gate charge waveforms s(th (th 100 140 180 page 7 BSC119N03S [nC] gate gate 2004-12-15 ...
Page 8
... Package Outline P-TDSON-8: Outline Footprint Dimensions in mm Rev. 1.01 page 8 BSC119N03S G 2004-12-15 ...
Page 9
... Package Outline P-TDSON-8: Tape Dimensions in mm Rev. 1.01 page 9 BSC119N03S G 2004-12-15 ...
Page 10
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.01 page 10 BSC119N03S G 2004-12-15 ...