bsc190n15ns3g Infineon Technologies Corporation, bsc190n15ns3g Datasheet

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bsc190n15ns3g

Manufacturer Part Number
bsc190n15ns3g
Description
Optimos 3 Power Transistor Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet

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Rev. 2.2
Features
• N-channel, normal level
• Excellent gate charge x R
• Very low on-resistance R
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
• Ideal for high-frequency switching and synchronous rectification
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
Package
Marking
®
3 Power-Transistor
BSC190N15NS3 G
PG-TDSON-8
190N15NS
2)
3)
j
=25 °C, unless otherwise specified
DS(on)
DS(on)
1)
product (FOM)
for target application
Symbol Conditions
I
I
E
V
P
T
D
D,pulse
j
AS
GS
tot
, T
stg
T
T
T
I
T
D
page 1
C
C
C
C
=50 A, R
=25 °C
=100 °C
=25 °C
=25 °C
GS
=25 Ω
Product Summary
V
R
I
D
DS
DS(on),max
-55 ... 150
55/175/56
Value
200
170
±20
125
50
33
BSC190N15NS3 G
150
19
50
Unit
A
mJ
V
W
°C
V
mΩ
A
2008-11-12

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bsc190n15ns3g Summary of contents

Page 1

OptiMOS ® 3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC • Ideal ...

Page 2

Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 1) ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output ...

Page 4

Power dissipation P =f(T ) tot C 150 125 100 Safe operating area I =f =25 ° parameter ...

Page 5

Typ. output characteristics I =f =25 ° parameter Typ. transfer characteristics I =f ...

Page 6

Drain-source on-state resistance =10 V DS(on 98 -60 - Typ. capacitances C =f(V ...

Page 7

Avalanche characteristics =25 Ω parameter: T j(start) 100 Drain-source breakdown voltage V =f BR(DSS 170 165 160 155 150 145 ...

Page 8

PG-TDSON-8 Outline Rev. 2.2 page 8 BSC190N15NS3 G 2008-11-12 ...

Page 9

Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...

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