bsc014n03msg Infineon Technologies Corporation, bsc014n03msg Datasheet

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bsc014n03msg

Manufacturer Part Number
bsc014n03msg
Description
Optimos 3 M-series Power- Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSC014N03MSG
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
bsc014n03msgATMA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.2
1)
Features
• Optimized for 5V driver application (Notebook, VGA, POL)
• Low FOM
• 100% avalanche tested
• N-channel
• Very low on-resistance R
• Excellent gate charge x R
• Qualified according to JEDEC
• Superior thermal resistance
• Pb-free plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche current, single pulse
Avalanche energy, single pulse
Gate source voltage
OptiMOS
Type
BSC014N03MS G
J-STD20 and JESD22
SW
®
3 M-Series Power-MOSFET
for High Frequency SMPS
3)
j
Package
PG-TDSON-8
=25 °C, unless otherwise specified
DS(on)
DS(on)
1)
4)
@ V
product (FOM)
for target applications
GS
Symbol Conditions
I
I
I
E
V
=4.5 V
D
D,pulse
AS
AS
GS
Marking
014N03MS
V
V
V
V
T
V
R
T
T
I
D
page 1
C
C
C
GS
GS
GS
GS
GS
thJA
=50 A, R
=100 °C
=25 °C
=25 °C
=10 V, T
=10 V, T
=4.5 V, T
=4.5 V,
=4.5 V, T
=50 K/W
GS
C
C
=25 Ω
C
A
2)
=25 °C
=100 °C
V
R
I
=25 °C
=25 °C,
Product Summary
D
DS
DS(on),max
V
V
GS
GS
=10 V
=4.5 V
Value
100
100
100
100
400
340
±20
30
50
PG-TDSON-8
BSC014N03MS G
1.75
100
1.4
30
Unit
A
mJ
V
V
mΩ
A
2008-11-14

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bsc014n03msg Summary of contents

Page 1

OptiMOS ® 3 M-Series Power-MOSFET Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOM for High Frequency SMPS SW • 100% avalanche tested • N-channel • Very low on-resistance R DS(on) • Excellent gate charge x ...

Page 2

Maximum ratings =25 °C, unless otherwise specified j Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Parameter Thermal characteristics Thermal resistance, junction - case Device on PCB Electrical characteristics Static characteristics ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...

Page 4

Power dissipation P =f(T ) tot C 150 120 Safe operating area I =f =25 ° parameter limited by on-state ...

Page 5

Typ. output characteristics I =f =25 ° parameter 300 250 10 V 200 150 100 Typ. transfer characteristics I =f ...

Page 6

Drain-source on-state resistance =10 V DS(on -60 - Typ. capacitances C =f MHz DS ...

Page 7

Avalanche characteristics =25 Ω parameter: T j(start) 100 125 ° Drain-source breakdown voltage V =f BR(DSS ...

Page 8

Package Outline PG-TDSON-8: Outline Footprint Dimensions in mm Rev. 1.2 PG-TDSON-8 page 8 BSC014N03MS G 2008-11-14 ...

Page 9

Package Outline PG-TDSON-8: Tape Dimensions in mm Rev. 1.2 page 9 BSC014N03MS G 2008-11-14 ...

Page 10

Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...

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