si7446dp-t1 Vishay, si7446dp-t1 Datasheet

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si7446dp-t1

Manufacturer Part Number
si7446dp-t1
Description
N-channel 30-v D-s Fast Switching Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si7446dp-t1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 71335
S-31728—Rev. B, 18-Aug-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
30
30
(V)
J
8
ti
6.15 mm
D
Ordering Information: Si7446DP-T1
t A bi
7
D
N-Channel 30-V (D-S) Fast Switching MOSFET
6
D
PowerPAKr SO-8
J
J
a
a
0.0075 @ V
0.010 @ V
= 150_C)
= 150_C)
t
Bottom View
a
a
5
Parameter
Parameter
D
r
DS(on)
a
a
GS
1
GS
S
(W)
= 4.5 V
= 10 V
2
S
a
3
S
5.15 mm
4
G
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
T
T
T
T
t v 10 sec
A
A
A
A
I
= 25_C
= 70_C
= 25_C
= 70_C
D
19
17
(A)
N-Channel MOSFET
Symbol
Symbol
G
T
R
R
R
V
V
J
I
P
P
, T
DM
thJC
I
I
I
thJA
DS
GS
D
D
S
D
D
stg
D
S
D
FEATURES
D TrenchFETr Power MOSFET
D High-Efficiency PWM Optimized
D 100% R
D
S S
10 secs
Typical
D
4.3
5.2
3.3
1.5
19
15
19
52
g
Tested
-55 to 150
"20
30
50
Steady State
Maximum
Vishay Siliconix
1.6
1.9
1.2
1.8
12
24
65
9
Si7446DP
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1

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si7446dp-t1 Summary of contents

Page 1

... PowerPAKr SO Bottom View Ordering Information: Si7446DP-T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction Maximum Power Dissipation ...

Page 2

... Si7446DP Vishay Siliconix MOSFET SPECIFICATIONS (T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current NO TAG On-State Drain Current NO TAG NO TAG Drain-Source On-State Resistance Drain-Source On-State Resistance NO TAG Forward Transconductance NO TAG Diode Forward Voltage ...

Page 3

... 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Document Number: 71335 S-31728—Rev. B, 18-Aug- 25_C J 0.8 1.0 1.2 Si7446DP Vishay Siliconix Capacitance 6000 5000 C iss 4000 3000 2000 C oss 1000 C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature ...

Page 4

... Si7446DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 = 250 0.2 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -50 - Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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