si742dn Vishay, si742dn Datasheet

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si742dn

Manufacturer Part Number
si742dn
Description
P-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet
Notes
a.
Document Number: 72416
S-32411—Rev. B, 24-Nov-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
ï30
ï30
(V)
J
8
ti
3.30 mm
D
Ordering Information: Si7421DN-T1—E3
t A bi
7
D
6
D
0.043 @ V
0.025 @ V
J
J
a
a
PowerPAK 1212-8
= 150_C)
= 150_C)
t
Bottom View
a
a
5
D
r
Parameter
Parameter
DS(on)
GS
GS
a
a
1
= ï4.5 V
= ï10 V
S
(W)
P-Channel 30-V (D-S) MOSFET
2
a
S
3
S
3.30 mm
4
G
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
t v 10 sec
T
T
T
T
I
New Product
A
A
A
A
D
ï9.8
ï7.4
= 25_C
= 85_C
= 25_C
= 85_C
(A)
G
Symbol
Symbol
T
P-Channel MOSFET
R
R
R
FEATURES
D TrenchFETr Power MOSFET
D New PowerPAKr Package
APPLICATIONS
D Battery Switch
J
V
V
I
P
P
, T
thJC
DM
thJA
I
I
I
GS
DS
D
D
S
D
D
stg
ï Low Thermal Resistance, R
ï Low 1.07-mm Profile
S
D
10 secs
Typical
ï9.8
3.6
1.9
2.9
ï7
ï3
28
65
ï55 to 150
"20
ï30
ï30
Steady State
Maximum
Vishay Siliconix
ï6.4
ï4.6
ï1.3
1.5
0.8
3.8
35
81
thJC
Si7421DN
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
W
V
V
A
A
1

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si742dn Summary of contents

Page 1

... 25_C 85_C stg Symbol sec R R thJA Steady State Steady State R thJC Si7421DN Vishay Siliconix thJC secs Steady State ï30 "20 ï6.4 ï9.8 ï7 ï4.6 ï30 ï3 ï1.3 3.6 1.5 1.9 0.8 ï55 to 150 Typical Maximum ...

Page 2

... Si7421DN Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...

Page 3

... V ï Source-to-Drain Voltage (V) SD Document Number: 72416 S-32411—Rev. B, 24-Nov-03 New Product 25_C J 1.0 1.2 1.4 Si7421DN Vishay Siliconix Capacitance 2000 1600 C iss 1200 800 C 400 oss C rss ï Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...

Page 4

... Si7421DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0 250 mA D 0.4 0.3 0.2 0.1 ï0.0 ï0.1 ï0.2 ï0.3 ï50 ï ï Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 ï4 ï www.vishay.com 4 New Product 50 40 ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 ï4 10 Document Number: 72416 S-32411—Rev. B, 24-Nov-03 New Product ï3 ï Square Wave Pulse Duration (sec) Si7421DN Vishay Siliconix ï www.vishay.com 5 ...

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