ssm6n7002afu TOSHIBA Semiconductor CORPORATION, ssm6n7002afu Datasheet

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ssm6n7002afu

Manufacturer Part Number
ssm6n7002afu
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
High Speed Switching Applications
Analog Switch Applications
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Marking
Handling Precaution
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
Small package
Low ON resistance
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
Note: Total rating, mounted on FR4 board
6
1
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32mm
NK
Characteristics
5
2
0.4 mm
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
4
3
: R
: R
: R
DC
Pulse
on
on
on
= 3.3 Ω (max) (@V
= 3.2 Ω (max) (@V
= 3.0 Ω (max) (@V
SSM6N7002AFU
Symbol
P
V
V
T
D
I
T
GSS
I
DP
DS
stg
D
ch
(Note)
Equivalent Circuit
GS
GS
GS
= 4.5 V)
= 5 V)
= 10 V)
2
−55~150
6
1
Rating
× 6)
± 20
200
800
300
150
60
Q1
1
5
2
Unit
mW
mA
Q2
°C
°C
V
V
(top view)
4
3
Weight: 0.012 g (typ.)
JEDEC
JEITA
TOSHIBA
US6
1.SOURCE1
2.GATE1
3.DRAIN2
SSM6N7002AFU
1
2
3
1.25±0.1
2.1±0.1
4.SOURCE2
5.GATE2
6.DRAIN1
2-2J1C
2007-05-28
6
5
4
Unit: mm

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ssm6n7002afu Summary of contents

Page 1

... D T 150 °C ch −55~150 T °C stg 2 × 6) Equivalent Circuit (top view SSM6N7002AFU Unit: mm 2.1±0.1 1.25±0 JEDEC ― 1.SOURCE1 4.SOURCE2 JEITA ― 2.GATE1 5.GATE2 3.DRAIN2 6.DRAIN1 TOSHIBA 2-2J1C US6 Weight: 0.012 g (typ.) 2007-05-28 ...

Page 2

... V ( OUT (c) V OUT (ON) requires a higher voltage than V GS (on) < V < (off (on). 2 SSM6N7002AFU Min Typ Max = 0 V ⎯ ⎯ ± 0 ⎯ ⎯ ⎯ ⎯ ⎯ 1.0 2.5 ⎯ ⎯ 205 = 10 V ⎯ ...

Page 3

... 100 mA 0 1000 −50 2.0 1.5 100°C 1.0 0.5 −25°C Common source 0. − SSM6N7002AFU I – 25°C −25° Gate-Source voltage V GS (V) R – (ON 4 100 500 mA ...

Page 4

... Drain-Source voltage V DS (V) 1000 t f 500 300 C iss 100 t d(off oss d(on) C rss 100 1 3 160 4 SSM6N7002AFU I – −0.8 −1.2 −1.6 −2 t – Common source 4 25° 300 10 50 100 500 ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. SSM6N7002AFU 5 20070701-EN 2007-05-28 ...

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