ssm6k202fe TOSHIBA Semiconductor CORPORATION, ssm6k202fe Datasheet
ssm6k202fe
Manufacturer Part Number
ssm6k202fe
Description
Toshiba Field-effect Transistor Silicon N-channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.SSM6K202FE.pdf
(6 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SSM6K202FE
Manufacturer:
TOSHIBA
Quantity:
3 950
Part Number:
SSM6K202FE
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
○ High-Speed Switching Applications
○ Power Management Switch Applications
•
•
Absolute Maximum Ratings (Ta = 25˚C)
Electrical Characteristics
1.8 V drive
Low ON-resistance:
Drain–source voltage
Gate–source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature
Note:
Note 1: Mounted on an FR4 board
Drain–source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Drain–source forward voltage
Note 2: Pulse test
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm
Characteristic
Characteristic
Turn-on time
Turn-off time
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
R
R
R
on
on
on
Pulse
DC
SSM6K202FE
= 145 mΩ (max) (@V
= 101 mΩ (max) (@V
= 85 mΩ (max) (@V
(Ta = 25°C)
V
V
P
R
Symbol
(BR) DSS
(BR) DSX
D
⏐Y
DS (ON)
V
Symbol
I
I
C
C
C
DSS
GSS
V
t
t
DSF
V
oss
on
off
rss
V
iss
T
th
fs
I
T
(Note 1)
GSS
I
DP
DS
stg
D
ch
⏐
I
I
V
V
V
V
I
I
I
V
V
V
V
V
I
D
D
D
D
D
D
GS
DS
GS
DS
DS
DS
DS
DS
DD
GS
GS
GS
= 1 mA, V
= 1 mA, V
= 1.5 A, V
= 1.0 A, V
= 0.5 A, V
= − 2.3 A, V
−55 to 150
= 4.0V)
= 30 V, V
= 3 V, I
= 3 V, I
= 10 V, V
= 10 V, V
= 10 V, V
= 10 V, I
= ± 12 V, V
= 0 to 2.5 V, R
Rating
= 1.8V)
= 2.5V)
2
± 12
500
150
2.3
4.6
)
30
1
D
D
Test Condition
GS
GS
GS
GS
GS
D
= 1 mA
= 1.5 A
GS
GS
GS
GS
GS
= 2 A,
= 0
= –12 V
DS
= 4.0 V
= 2.5 V
= 1.8 V
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0 V
= 0
G
= 4.7 Ω
Unit
mW
°C
°C
V
V
A
(Note2)
(Note2)
(Note2)
(Note2)
(Note2)
Weight: 3 mg (typ.)
JEDEC
JEITA
TOSHIBA
ES6
Min
0.4
3.9
30
18
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1, 2, 5, 6 : Drain
3
4
– 0.85
SSM6K202FE
Typ.
270
7.8
66
78
95
56
47
20
31
⎯
⎯
⎯
⎯
⎯
: Gate
: Source
2-2N1A
2007-11-01
―
―
– 1.2
Max
101
145
1.0
⎯
⎯
±1
⎯
85
⎯
⎯
⎯
⎯
⎯
1
Unit: mm
Unit
mΩ
μA
μA
pF
pF
pF
ns
V
V
V
S
V
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ssm6k202fe Summary of contents
Page 1
... 2 4.7 Ω off = − 2 DSF SSM6K202FE Unit Drain 3 : Gate 4 : Source ES6 JEDEC ― JEITA ― 2-2N1A TOSHIBA Weight (typ.) Min Typ. Max Unit ⎯ ⎯ 30 ⎯ ...
Page 2
... V IN OUT (c) V OUT V DD Equivalent Circuit (top view requires a higher voltage than V GS (on) < V < (off (on). 2 SSM6K202FE 2.5 V 90% 10 10% 90 (ON off = 1 mA for D and V requires a lower th ...
Page 3
... Gate–source voltage V 200 Common Source Ta = 25°C 150 100 50 VGS = 4 1.0 0.5 Common source −50 150 Ambient temperature Ta (°C) 3 SSM6K202FE I – °C − 25 °C 1.0 2.0 ( – (ON) D 1 Drain current I (A) ...
Page 4
... Drain–source voltage V 1000 t off C iss 100 oss C rss 100 0.01 140 160 4 SSM6K202FE I – =100 °C 25 °C −25 °C –0.4 –0.6 –0.8 –1.0 ( – Common Source 2 25° ...
Page 5
... SSM6K202FE 2007-11-01 ...
Page 6
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 SSM6K202FE 20070701-EN GENERAL 2007-11-01 ...