ssm6k06fu TOSHIBA Semiconductor CORPORATION, ssm6k06fu Datasheet
ssm6k06fu
Manufacturer Part Number
ssm6k06fu
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.SSM6K06FU.pdf
(6 pages)
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High Speed Switching Applications
•
•
•
Absolute Maximum Ratings
Marking
Handling Precaution
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
Small package
Low on resistance : R
Low gate threshold voltage
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
Note:
Note 1: Mounted on FR4 board.
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 0.32 mm
Characteristics
: R
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
on
on
DC
Pulse
= 160 mΩ max (@V
= 210 mΩ max (@V
SSM6K06FU
(Ta = 25°C)
Symbol
V
V
T
I
T
P
GSS
I
DP
(Note 1)
DS
stg
D
ch
D
GS
GS
= 4 V)
= 2.5 V)
−55~150
Rating
±12
300
150
1.1
2.2
20
2
1
× 6) Figure 1.
Equivalent Circuit
Unit
mW
°C
°C
V
V
A
Weight: 6.8 mg (typ.)
JEDEC
JEITA
TOSHIBA
(top view)
SSM6K06FU
2-2J1D
2007-11-01
―
―
Unit: mm
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ssm6k06fu Summary of contents
Page 1
... 2 (Ta = 25°C) Symbol Rating Unit ± GSS 300 mW (Note 1) T 150 °C ch −55~150 T °C stg 2 × 6) Figure 1. Equivalent Circuit 1 SSM6K06FU Unit: mm JEDEC ― JEITA ― TOSHIBA 2-2J1D Weight: 6.8 mg (typ.) (top view) 2007-11-01 ...
Page 2
... V oss 0 4.7 Ω off requires higher voltage than V GS (on) < V < (off (on) 2 SSM6K06FU Min Typ. Max ⎯ ⎯ ±1 ⎯ ⎯ 20 ⎯ ⎯ 1 ⎯ 0.6 1.1 ⎯ ⎯ (Note 2) 1.2 ⎯ (Note 2) 120 160 ⎯ ...
Page 3
... SSM6K06FU 2007-11-01 ...
Page 4
... SSM6K06FU 2007-11-01 ...
Page 5
... Figure 1 25.4 mm × 25.4 mm × 1 Pad: 0. SSM6K06FU 2 × 6 2007-11-01 ...
Page 6
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 SSM6K06FU 20070701-EN GENERAL 2007-11-01 ...