ssm6e01tu TOSHIBA Semiconductor CORPORATION, ssm6e01tu Datasheet

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ssm6e01tu

Manufacturer Part Number
ssm6e01tu
Description
Toshiba Multi-chip Device Silicon P-channel Mos Type U-mos Ii N-channel Mos Type Planer
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Part Number:
ssm6e01tu-TE85L
Manufacturer:
NXP
Quantity:
182
Load Switch Applications
Q1 Maximum Ratings
Q2 Maximum Ratings
Maximum Ratings (Q1, Q2 common)
Marking
P-channel MOSFET and N-channel MOSFET incorporated into one
package.
Low power dissipation due to P-channel MOSFET that features low
R
Drain-Source voltage
Gate-Source voltage
Drain current
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm
Note 2: Pulse width limited by maximum channel temperature.
DS (ON)
6
1
KTA
and low-voltage operation
Characteristics
Characteristics
Characteristics
5
2
Silicon P-Channel MOS Type (U-MOS II) + N-Channel MOS Type (Planer)
4
3
Pulse
Pulse
DC
DC
(Ta = = = = 25°C)
(Ta = = = = 25°C)
SSM6E01TU
I
I
P
DP
DP
Symbol
Symbol
Symbol
D
V
V
V
V
T
T
TOSHIBA Multi-Chip Device
GSS
GSS
I
(Note 2)
I
(Note 2)
(Note 1)
DS
DS
stg
D
D
ch
Equivalent Circuit
(Ta = = = = 25°C)
−55 to 150
Rating
Rating
Rating
6
1
−1.0
−2.0
0.05
−12
±12
150
0.2
0.5
Q2
20
10
1
5
2
Q1
Unit
Unit
Unit
°C
°C
W
V
V
A
V
V
A
4
3
(top view)
Weight: 7.0 mg (typ.)
JEDEC
JEITA
TOSHIBA
2
)
SSM6E01TU
2003-07-08
Unit: mm

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ssm6e01tu Summary of contents

Page 1

... GSS I 0. (Note 2) 0 25°C) Symbol Rating Unit P (Note 1) 0 150 °C ch −55 to 150 T °C stg Equivalent Circuit SSM6E01TU JEDEC ― JEITA ― TOSHIBA ― Weight: 7.0 mg (typ (top view) 2003-07-08 Unit: mm ...

Page 2

... Operators should wear anti-static clothing, containers and other objects which may come into direct contact with devices should be made of anti-static materials. Thermal resistance R and drain power dissipation P th (j-a) thickness and pad area. When using this device, please take heat dissipation into consideration. vary depending on board material, board area, board D 2 SSM6E01TU 2003-07-08 ...

Page 3

... (ON MHz C V iss 0~ requires higher voltage than V GS (on) < (off) 3 SSM6E01TU Min Typ. Max   1.2   ±1 −12     −1 −0.4  −1.1  (Note 3) 1.3 2.5  ...

Page 4

... V 0.4 0.2 −4 −1.5 −2.0 0 (A) −1 −0.8 −0.6 −0.4 −0.2 0 −25 100 125 150 4 SSM6E01TU I – 25°C −25°C 100°C −0.5 −1 −1.5 −2 −2.5 Gate-Source voltage V ( – (ON) GS Common source −0.5 A 25° 100° ...

Page 5

... Drain-Source voltage V 1000 100 10 −0.1 −1000 −10000 (mA) 500 100 −0.01 0 SSM6E01TU C – iss C oss C rss Common source MHz Ta = 25°C −1 −10 −100 Drain-Source voltage V ( – Common source − −2 4.7 Ω ...

Page 6

... DS 1000 100 10 1 0.1 0.01 −0.8 −1.0 −1.2 0 (V) DS 100 100 0.1 (mA) 6 SSM6E01TU I – V (low-voltage area 2.0 4.0 2.5 2.2 Common source Ta = 25°C 1.8 1 1.4 V 0.2 0.4 0.6 0.8 Drain-Source voltage V ( – Common source 100°C 25°C −25°C ...

Page 7

... Ambient temperature Ta (°C) 10000 Common source 5000 Ta = 25°C 3000 1000 500 300 2.5 100 50 30 0.1 80 100 (mA) 2.5 100 125 150 7 SSM6E01TU t – Common source 0~2 25°C t off 0 Drain current I (mA) D 2003-07-08 100 ...

Page 8

... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 8 SSM6E01TU 030619EAA 2003-07-08 ...

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