ssm3k16ct TOSHIBA Semiconductor CORPORATION, ssm3k16ct Datasheet
ssm3k16ct
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ssm3k16ct Summary of contents
Page 1
... T 150 ch −55~150 °C T stg 2 ) Pin Condition (Top View) Polarity mark (on the top Gate 2. Source 3. Drain * Electrodes: on the bottom 1 SSM3K16CT Unit: mm 0.6±0.05 0.5±0.03 ３ １ ２ 0.35±0.02 0.05±0.03 0.15±0.03 CST3 JEDEC - JEITA - TOSHIBA 2-1J1B Weight: 0.75 mg (typ.) Equivalent Circuit 3 1 ...
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... mA 0~2 off ( OUT R L (c) V OUT V DD requires a higher voltage than V GS (on) GS (off) 2 SSM3K16CT Min Typ. Max ⎯ ⎯ ±1 ⎯ ⎯ 20 ⎯ ⎯ 1 ⎯ 0.6 1.1 ⎯ ⎯ 40 ⎯ 1.5 3.0 ⎯ 2.2 4.0 ⎯ 5.2 15 ⎯ ...
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... Gate-Source voltage V GS (V) 2 Common source 0 1.6 1.2 0.8 0.4 0 −25 125 150 0 Ambient temperature Ta (°C) 3 SSM3K16CT I – −25° – (ON) GS Common source 100°C 25°C −25° – ...
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... Drain-Source voltage V DS (V) 5000 3000 t off 1000 500 t f 300 100 100 10 0.1 140 160 4 SSM3K16CT I – −0.4 −0.6 −0.8 −1 −1.2 −1.4 t – Common source 0~2 25° 100 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM3K16CT 20070701-EN GENERAL 2007-11-01 ...