ssm3k14t TOSHIBA Semiconductor CORPORATION, ssm3k14t Datasheet

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ssm3k14t

Manufacturer Part Number
ssm3k14t
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mosii
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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DC-DC Converter
High Speed Switching Applications
Absolute Maximum Ratings
Marking
Handling Precaution
Small Package
Low ON-resistance : R
High speed : t
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
Note:
Note 1: Mounted on FR4 board
Note 2: The pulse width limited by max channel temperature.
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
the board material, board area, board thickness and pad area, and are also affected by the environment in
which the product is used. When using this device, please take heat dissipation fully into account.
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
The Channel-to-Ambient thermal resistance R
1
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm
KDK
Characteristic
: t
3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
on
off
= 24 ns (typ.)
= 19 ns (typ.)
2
: R
on
on
= 39 mΩ (max) (@V
= 57 mΩ (max) (@V
Pulse
DC
(Ta = 25°C)
I
P
DP
Symbol
SSM3K14T
D
V
V
T
T
GSS
I
(Note 2)
(Note 1)
t = 10 s
DS
stg
D
ch
Equivalent Circuit
GS
GS
= 10 V)
= 4.5 V)
th (ch-a)
1
−55~150
Rating
1.25
±20
150
2
4.0
8.0
0.7
30
)
1
3
and the drain power dissipation P
2
Unit
°C
°C
W
V
V
A
Weight: 10 mg (typ.)
JEDEC
JEITA
TOSHIBA
D
vary according to
SSM3K14T
2-3S1A
2007-11-01
Unit: mm

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ssm3k14t Summary of contents

Page 1

... V V GSS I 4 (Note 2) 8 (Note 1) 0 1.25 °C T 150 ch −55~150 °C T stg 2 ) Equivalent Circuit and the drain power dissipation P th (ch-a) 1 SSM3K14T Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight (typ.) vary according to D 2007-11-01 ...

Page 2

... R G D.U. < < (c) V OUT Common Source Ta = 25°C requires higher voltage than V GS (on) < V < (off (on) 2 SSM3K14T Min Typ. Max = 0 ⎯ ⎯ ±1 ⎯ ⎯ 30 ⎯ ⎯ 15 ⎯ ⎯ ⎯ 1.0 2.5 ⎯ (Note 3) 3.2 6.4 ⎯ ...

Page 3

... Gate-Source voltage 0.1 mA 2.5 Common Source 2 1.5 1 0.5 0 −25 125 150 0 Ambient temperature Ta (°C) 3 SSM3K14T I – 100°C −25°C 25° Common Source – (ON) GS Common Source 100°C 25 − ...

Page 4

... Drain-Source voltage V DS (V) 10 1000 500 300 100 0.01 −1 4 SSM3K14T C – iss C oss C rss 1 10 100 t – Common Source 0 Ω t off Ta = 25°C 0 Drain current I D (A) ...

Page 5

... DC 0.75 0.5 0. Ambient temperature Ta (°C) 100 r – Single pulse Mounted on FR4 board (25.4 mm × 25.4 mm × 1 pad: 645 mm 0 Pulse width tw (s) 5 SSM3K14T P – Mounted on FR4 board (25.4 mm × 25.4 mm × 1 pad: 645 100 125 150 2 ) 100 1000 2007-11-01 ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 SSM3K14T 20070701-EN GENERAL 2007-11-01 ...

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