ssm3k302t TOSHIBA Semiconductor CORPORATION, ssm3k302t Datasheet

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ssm3k302t

Manufacturer Part Number
ssm3k302t
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Power Management Switch Applications
High Speed Switching Applications
Absolute Maximum Ratings
Electrical Characteristics
1.8 V drive
Low ON-resistance:
Drain–source voltage
Gate–source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note:
Note 1: Mounted on an FR4 board.
Drain–source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Drain–source forward voltage
Note2: Pulse test
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm
Characteristic
Characteristic
Turn-on time
Turn-off time
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
DC
Pulse
R
R
R
on
on
on
= 131 mΩ (max) (@V
= 87mΩ (max) (@V
= 71 mΩ (max) (@V
(Ta = 25°C)
V
V
P
R
Symbol
SSM3K302T
(Ta = 25°C)
Symbol
(BR) DSS
(BR) DSX
D (Note 1)
⏐Y
DS (ON)
V
I
I
C
V
C
C
DSS
GSS
Q
Q
V
V
t
t
T
Q
DSF
T
I
oss
on
off
GSS
rss
iss
I
DP
th
fs
DS
stg
gs
gd
D
ch
g
I
I
V
V
V
V
I
I
I
V
V
V
V
V
I
D
D
D
D
D
D
DS
GS
DS
DS
DS
DS
GS
DD
GS
GS
GS
GS
= 1 mA, V
= 1 mA, V
= 2.0 A, V
= 1.0 A, V
= 0.5 A, V
= − 3.0 A, V
= 30 V, V
= 3 V, I
= 3 V, I
= 10 V, V
= 15 V, I
= 10 V, I
−55~150
= ± 12 V, V
= 4 V
= 0 to 2.5 V, R
= 2.5V)
Rating
= 1.8V)
= 4.0V)
2
± 12
700
150
3.0
6.0
30
)
1
D
D
Test Condition
GS
GS
GS
GS
GS
DS
D
= 1 mA
= 2 A
GS
GS
GS
= 2 A,
= 0
= –12 V
DS
= 4.0 V
= 2.5 V
= 1.8 V
= 3.0 A
= 0
= 0, f = 1 MHz
= 0 V
= 0
G
= 4.7 Ω
Unit
mW
°C
°C
V
V
A
(Note2)
(Note2)
(Note2)
(Note2)
(Note2)
Weight: 10 mg (typ.)
JEDEC
JEITA
TOSHIBA
Min
0.4
3.8
30
18
– 0.85
Typ.
270
7.7
4.3
2.8
1.5
52
64
81
56
47
20
31
SSM3K302T
2-3S1A
2007-11-01
– 1.2
Max
131
1.0
±1
71
87
1
Unit: mm
Unit
μA
μA
nC
pF
ns
V
V
V
S
V

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ssm3k302t Summary of contents

Page 1

... 2 4.7 Ω off = − 3 DSF SSM3K302T JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight (typ.) Min Typ. Max ⎯ 30 ⎯ 18 ⎯ ⎯ ⎯ ⎯ ⎯ 0.4 1.0 (Note2) 3 ...

Page 2

... V IN OUT (c) V OUT V DD Equivalent Circuit (top view requires a higher voltage than V GS (on) < V < (off (on). 2 SSM3K302T 2.5 V 90% 10 10% 90 (ON off = 1 mA for D ...

Page 3

... Gate–source voltage V 200 Common Source Ta = 25°C 150 100 50 VGS = 4 1.0 0.5 Common source −50 150 Ambient temperature Ta (°C) 3 SSM3K302T I – °C − 25 °C 1.0 2.0 ( – (ON) D 1 Drain current I (A) ...

Page 4

... Drain–source voltage V 1000 t off C iss 100 oss C rss 100 0. SSM3K302T I – =100 °C 25 °C −25 °C –0.4 –0.6 –0.8 –1.0 ( – Common Source 2 25° ...

Page 5

... Pulse width t (s) w 1000 800 a 600 b 400 200 0 -40 -20 100 1000 Ambient temperature T 5 SSM3K302T P – Mounted on FR4 board (25.4mm × 25.4mm × 1. Pad : 645 Mounted on FR4 board (25.4mm × 25.4mm × 1. Pad : 0.8 mm × ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 SSM3K302T 20070701-EN GENERAL 2007-11-01 ...

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