ssm3j115tu TOSHIBA Semiconductor CORPORATION, ssm3j115tu Datasheet

ssm3j115tu

Manufacturer Part Number

ssm3j115tu

Description

Field-effect Transistor Silicon P-channel Mos Type High-speed Switching Applications Power Management Switch Applications

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.SSM3J115TU.pdf (6 pages)

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High-Speed Switching Applications

Power Management Switch Applications

•

Absolute Maximum Ratings

Electrical Characteristics

Note 3: Pulse test

1.5 V drive

Low ON-resistance:

Drain-source voltage

Gate-source voltage

Drain current

Drain power dissipation

Channel temperature

Storage temperature range

Note:

Note 1: Mounted on a ceramic board.

Note 2: Mounted on an FR4 board.

Drain-source breakdown voltage

Drain cutoff current

Gate leakage current

Gate threshold voltage

Forward transfer admittance

Drain-source ON-resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Switching time

Drain-source forward voltage

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure

rate, etc).

(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm

Characteristic

Turn-on time

Turn-off time

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type

Pulse

= 353 mΩ (max) (@V

= 193 mΩ (max) (@V

= 125 mΩ (max) (@V

= 98 mΩ (max) (@V

(Ta = 25°C)

SSM3J115TU

Symbol

(Ta = 25°C)

Symbol

(BR) DSS

(BR) DSX

⏐Y

D (Note 1)

D (Note 2)

DS (ON)

DSS

GSS

DSF

off

oss

GSS

rss

iss

stg

⏐

= −1 mA, V

= −1.0 A, V

= −0.1 A, V

= 2.2 A, V

= −20 V, V

= ±8 V, V

= −3 V, I

= −10 V, V

= −10 V, I

= 0~−2.5 V, R

−55~150

= −1.5 V)

= −1.8 V)

= −2.5 V)

Rating

= −4.0 V)

−2.2

−4.4

−20

800

500

150

± 8

Test Conditions

)

= −1 mA

= − 0.9 A

= 0 V

= −0.9 A,

= 0

= +8 V

= −4.0 V

= −2.5 V

= −1.8 V

= −1.5 V

= 0

= 0, f = 1 MHz

= 4.7 Ω

Unit

°C

(Note 3)

Weight: 6.6 mg (typ.)

JEDEC

JEITA

TOSHIBA

UFM

−0.3

Min

−20

−12

2.7

⎯

1: Gate

2: Source

3: Drain

Typ.

111

126

568

SSM3J115TU

5.4

0.8

⎯

2.1±0.1

1.7±0.1

2-2U1A

2007-11-01

―

Max

−1.0

−10

125

193

353

1.2

±1

⎯

Unit: mm

Unit

mΩ

μA

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ssm3j115tu Summary of contents

Page 1

... − −0 0~−2 4.7 Ω off = 2 DSF SSM3J115TU Unit: mm 2.1±0.1 1.7±0 Gate 2: Source 3: Drain UFM JEDEC ― JEITA ― TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Min Typ. Max Unit −20 ⎯ ...

Page 2

... OUT R −2 ( OUT DS (ON (top view requires a higher voltage than V GS (on) < V < (off (on). 2 SSM3J115TU 10% 90% 90% 10 off = −1 mA for D and V requires a lower th, GS (off) ) 2007-11-01 ...

... Gate–source voltage V 400 300 200 100 Gate –source voltage V 500 Common Source 400 300 -1A / -1.8 V 200 100 0 -4 −50 0 Ambient temperature Ta (°C) 3 SSM3J115TU I – 25°C −25°C -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 ( – (ON -1.0 A Common Source 25° 85°C − ...

Page 4

... Total gate charge Q -2 Common Source = 25° 0.2 10 Drain– source voltage V 4 SSM3J115TU |Y | – -100 -1000 -10000 Drain current I (mA - Common Source -1 25° (nC – V ...

Page 5

... Cu Pad :25.4mm×25.4mm 10 b:Mounted on FR4 board (25.4mm×25.4mm×1.6mm) Cu Pad :25.4mm×25.4mm c:Mounted on FR4 Board (25.4mm×25.4mm×1.6mm) Cu Pad :0.45mm×0.8mm×3 1 0.001 0.01 0.1 1 Pulse w idth tw (S) 5 SSM3J115TU 10 100 1000 2007-11-01 ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 SSM3J115TU 20070701-EN GENERAL 2007-11-01 ...

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ssm3j115tu TOSHIBA Semiconductor CORPORATION, ssm3j115tu Datasheet

ssm3j115tu

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ssm3j115tu Summary of contents

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