ssm3j15fv TOSHIBA Semiconductor CORPORATION, ssm3j15fv Datasheet

no-image

ssm3j15fv

Manufacturer Part Number
ssm3j15fv
Description
Field Effect Transistor Silicon P Channel Mos Type High Speed Switching Applications Analog Switch Applications
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SSM3J15FV
Manufacturer:
SONY
Quantity:
120
Part Number:
SSM3J15FV
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
ssm3j15fv(TL3SONY)
Manufacturer:
TOSHIBA
Quantity:
6 968
Part Number:
ssm3j15fv(TL3SONYZ
Quantity:
18
Part Number:
ssm3j15fv(TL3SONYZ)
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
ssm3j15fv(TPL3
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
ssm3j15fv(TPL3,Z)
Manufacturer:
SHARP
Quantity:
10 948
High Speed Switching Applications
Analog Switch Applications
Absolute Maximum Ratings
Marking
Handling Precaution
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Note 1: Total rating, mounted on FR4 board
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
Optimum for high-density mounting in small packages
Low on-resistance
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of
1
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.585 mm
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
D Q
Characteristics
3
0.5mm
0.4mm
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2
: R
: R
0.45mm
DC
Pulse
0.45mm
on
on
= 12 Ω (max) (@V
= 32 Ω (max) (@V
Equivalent Circuit
P
(Ta = 25°C)
SSM3J15FV
D
Symbol
V
(Note 1)
V
T
I
T
GSS
I
DP
1
DS
stg
D
ch
GS
GS
= −4 V)
= −2.5 V)
3
−55~150
Rating
−100
−200
−30
±20
150
150
2
)
1
2
(top view)
Unit
mW
mA
°C
°C
V
V
Weight: 0.0015 g(typ.)
JEDEC
JEITA
TOSHIBA
VESM
1
1.GATE
2.SOURCE
3.DRAIN
2
1
SSM3J15FV
0.80 ± 0.05
1.2 ± 0.05
2-1L1B
2007-11-01
3
Unit: mm

Related parts for ssm3j15fv

Related keywords