ssm3j35fs TOSHIBA Semiconductor CORPORATION, ssm3j35fs Datasheet

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ssm3j35fs

Manufacturer Part Number
ssm3j35fs
Description
Toshiba Field-effect Transistor Silicon P-channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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○ High-Speed Switching Applications
○ Analog Switch Applications
Absolute Maximum Ratings (Ta = 25˚C)
Marking
Note: Using continuously under heavy loads (e.g. the application of high
1.2V drive
Low ON-resistance : R
Drain–source voltage
Gate–source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature
1
temperature/current/voltage
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within
the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
PZ
3
Characteristic
2
: R
: R
: R
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
on
on
on
on
= 44 Ω (max) (@V
= 22 Ω (max) (@V
= 11 Ω (max) (@V
= 8 Ω (max) (@V
Pulse
DC
Equivalent Circuit
and
SSM3J35FS
Symbol
V
V
T
I
T
GSS
DSS
I
DP
P
stg
D
ch
the
D
GS
GS
GS
GS
1
= -2.5 V)
= -1.2 V)
= -1.5 V)
= -4.0 V)
significant
3
−55 to 150
Rating
-100
-200
±10
100
150
-20
1
2
change
(top view)
Unit
mW
mA
°C
°C
V
V
in
Weight: 2.4 mg (typ.)
JEDEC
JEITA
TOSHIBA
SSM3J35FS
2-2H1B
2009-06-25
-
-
Unit: mm

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ssm3j35fs Summary of contents

Page 1

... V) GS Symbol Rating Unit V -20 V DSS ± GSS I -100 -200 DP P 100 mW D °C T 150 ch −55 to 150 °C T stg and the significant change Equivalent Circuit (top view SSM3J35FS JEDEC - JEITA - TOSHIBA 2-2H1B Weight: 2.4 mg (typ.) in 2009-06-25 Unit: mm ...

Page 2

... Ta = 25°C Usage Considerations Let V be the voltage applied between gate and source that causes the drain current (I th SSM3J35FS). Then, for normal switching operation This relationship can be expressed as: V th. Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge ...

Page 3

... Ta=100℃ -25℃ -10 -2 (V) Gate–source voltage V 20 Common Source -1000 −50 Ambient temperature Ta (°C) 3 SSM3J35FS I – −25° (V) GS – (ON) GS Common Source -50 mA 25℃ Ta=100℃ -25℃ -10 ...

Page 4

... MHz Ta = 25°C 1 -0.1 1.2 1.4 (V) Drain–source voltage V 250 200 150 100 50 0 -1000 Ambient temperature Ta (°C) 4 SSM3J35FS ⎪Y ⎪ – Common Source 25°C -10 -100 -1000 (mA – iss C oss C rss -1 -10 -100 ...

Page 5

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM3J35FS 2009-06-25 ...

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