ssm3j35fs TOSHIBA Semiconductor CORPORATION, ssm3j35fs Datasheet
ssm3j35fs
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ssm3j35fs Summary of contents
Page 1
... V) GS Symbol Rating Unit V -20 V DSS ± GSS I -100 -200 DP P 100 mW D °C T 150 ch −55 to 150 °C T stg and the significant change Equivalent Circuit (top view SSM3J35FS JEDEC - JEITA - TOSHIBA 2-2H1B Weight: 2.4 mg (typ.) in 2009-06-25 Unit: mm ...
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... Ta = 25°C Usage Considerations Let V be the voltage applied between gate and source that causes the drain current (I th SSM3J35FS). Then, for normal switching operation This relationship can be expressed as: V th. Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge ...
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... Ta=100℃ -25℃ -10 -2 (V) Gate–source voltage V 20 Common Source -1000 −50 Ambient temperature Ta (°C) 3 SSM3J35FS I – −25° (V) GS – (ON) GS Common Source -50 mA 25℃ Ta=100℃ -25℃ -10 ...
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... MHz Ta = 25°C 1 -0.1 1.2 1.4 (V) Drain–source voltage V 250 200 150 100 50 0 -1000 Ambient temperature Ta (°C) 4 SSM3J35FS ⎪Y ⎪ – Common Source 25°C -10 -100 -1000 (mA – iss C oss C rss -1 -10 -100 ...
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... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM3J35FS 2009-06-25 ...